High performance AlGaN/GaN HEMT with improved ohmic contacts

S. J. Cai; R. Li; Y. L. Chen; L. Wong; W. G. Wu; S. G. Thomas; K. L. Wang

doi:10.1049/el:19981618

High performance AlGaN/GaN HEMT with improved ohmic contacts

S. J. Cai
, R. Li
, Y. L. Chen
, L. Wong
, W. G. Wu
, S. G. Thomas
, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

78 Citations (Scopus)

Abstract

Various metal films and rapid thermal annealing conditions were investigated to improve the Ohmic contact to AlGaN/GaN heterostuctures. Less than 1Ω.mm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039Ω.mm, corresponding to a contact resistance of 5.38 × 10^- ⁸Ω.cm². The fabricated high electron mobility transistors with a 0.25μm length gate exhibit a cutoff frequency f_T of 60GHz and an f_max of 100GHz.

Original language	English
Pages (from-to)	2354-2356
Number of pages	3
Journal	Electronics Letters
Volume	34
Issue number	24
DOIs	https://doi.org/10.1049/el:19981618
Publication status	Published - 1998 Nov 26

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19981618

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title = "High performance AlGaN/GaN HEMT with improved ohmic contacts",

abstract = "Various metal films and rapid thermal annealing conditions were investigated to improve the Ohmic contact to AlGaN/GaN heterostuctures. Less than 1Ω.mm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039Ω.mm, corresponding to a contact resistance of 5.38 × 10- 8Ω.cm2. The fabricated high electron mobility transistors with a 0.25μm length gate exhibit a cutoff frequency fT of 60GHz and an fmax of 100GHz.",

author = "Cai, \{S. J.\} and R. Li and Chen, \{Y. L.\} and L. Wong and Wu, \{W. G.\} and Thomas, \{S. G.\} and Wang, \{K. L.\}",

year = "1998",

month = nov,

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volume = "34",

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journal = "Electronics Letters",

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TY - JOUR

T1 - High performance AlGaN/GaN HEMT with improved ohmic contacts

AU - Cai, S. J.

AU - Li, R.

AU - Chen, Y. L.

AU - Wong, L.

AU - Wu, W. G.

AU - Thomas, S. G.

AU - Wang, K. L.

PY - 1998/11/26

Y1 - 1998/11/26

N2 - Various metal films and rapid thermal annealing conditions were investigated to improve the Ohmic contact to AlGaN/GaN heterostuctures. Less than 1Ω.mm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039Ω.mm, corresponding to a contact resistance of 5.38 × 10- 8Ω.cm2. The fabricated high electron mobility transistors with a 0.25μm length gate exhibit a cutoff frequency fT of 60GHz and an fmax of 100GHz.

AB - Various metal films and rapid thermal annealing conditions were investigated to improve the Ohmic contact to AlGaN/GaN heterostuctures. Less than 1Ω.mm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039Ω.mm, corresponding to a contact resistance of 5.38 × 10- 8Ω.cm2. The fabricated high electron mobility transistors with a 0.25μm length gate exhibit a cutoff frequency fT of 60GHz and an fmax of 100GHz.

UR - https://www.scopus.com/pages/publications/0032202916

UR - https://www.scopus.com/pages/publications/0032202916#tab=citedBy

U2 - 10.1049/el:19981618

DO - 10.1049/el:19981618

M3 - Article

AN - SCOPUS:0032202916

SN - 0013-5194

VL - 34

SP - 2354

EP - 2356

JO - Electronics Letters

JF - Electronics Letters

IS - 24

ER -

High performance AlGaN/GaN HEMT with improved ohmic contacts

Abstract

All Science Journal Classification (ASJC) codes

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