High performance bottom-gate-type amorphous InGaZnO flexible transparent thin-film transistors deposited on PET substrates at low temperature

Hsin Ying Lee, Wan Yi Ye, Yung Hao Lin, Li Ren Lou, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The InGaZnO channel layer of bottom-gate-type flexible transparent thin-film transistors was deposited on polyethylene terephthalate substrates using a magnetron radio frequency cosputter system with a single InGaZnO target. The composition of the InGaZnO channel layer was controlled by sputtering at various Ar/O2 gas ratios. A 15-nm-thick SiO y insulator film was used to passivate the InGaZnO channel layer. Much better performances of the passivated devices were obtained, which verified the passivation function. To study the bending stability of the resulting flexible transparent thin-film transistors, a stress test with a bending radius of 1.17 cm for 1,500 s was carried out, which showed a variation in the effective filed-effect mobility and the threshold voltage of the unpassivated and passivated devices being maintained within 10 and 8%, respectively.

Original languageEnglish
Pages (from-to)780-785
Number of pages6
JournalJournal of Electronic Materials
Volume43
Issue number3
DOIs
Publication statusPublished - 2014 Mar

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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