High-performance double δ-doped channel si metal semiconductor field-effect transistors

San Lein Wu, Shui Jinn Wang, Chen Chin Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper, we report the double boron δ-doped Si metal semiconductor field-effect transistors (MESFETs) grown by molecular beam epitaxy (MBE). It is found that when a double boron δ-doped layer has been used as a conducting channel, the devices exhibit the excellent property of not only higher drain-to-source saturation current (IDss) but also enhancement in extrinsic transconductance. MESFETs with a variety of boron doses of δ-doped layers have been fabricated and studied. The measured transconductance is enhanced two to five times over that of the single δ case.

Original languageEnglish
Pages (from-to)L1195-L1197
JournalJapanese Journal of Applied Physics
Volume33
Issue number9
DOIs
Publication statusPublished - 1994 Sep

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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