High-performance double delta-doped sheets Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic heterostructure transistors

Wen Lung Chang, Hsi Jen Pan, Wei Chou Wang, Kong Beng Thei, Kuo Hui Yu, Kun Wei Lin, Chin Chuan Cheng, Wen Shiung Lour, Wen Chau Liu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Novel double delta-doped sheet (D3S) Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high-electron-mobility transistors (PHEMTs) have been fabricated successfully and studied. A wide-gap Ga0.51In0.49P Schottky layer and a D3S structure are used to improve device performance. Furthermore, an airbridge-gate structure is employed to achieve good dc and RF performances. For a 1 μm gate length device, a high gate-to-drain breakdown voltage over 35 V, an available output current density up to 615 mA mm-1, a maximum transconductance of 110 mS mm-1 and a high dc gain ratio of 487 are obtained. On the other hand, the maximum values of unity current gain cut-off frequency fT and maximum oscillation frequency fmax are 19.5 and 40.5 GHz, respectively. The output power of 15.6 dB m (363 mW mm-1), power gain of 5.6 dB, power added efficiency (PAE) of 37% and drain efficiency (DE) of 51% are obtained at an input power of 10 dB m and the measured frequency of 2.4 GHz.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalSemiconductor Science and Technology
Volume15
Issue number1
DOIs
Publication statusPublished - 2000 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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