TY - JOUR
T1 - High performance double delta doping gaas/in0.25Ga0.75as/gaas pseudomorphic heterostructure
AU - Shieh, M.
AU - Hsu, W. C.
AU - Wu, C. L.
AU - Wu, T. S.
PY - 1993/3
Y1 - 1993/3
N2 - We report the preparation of high two-dimensional electron gas (2DEG) concentration and mobility in double delta doping, single quantum well GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Superior in gate voltage swing (3 V), saturation current density, and extrinsic transconductance to those of conventional InxGa1-xAs/GaAs pseudomorphic heterostructures with similar gate length (2 μm) ever reported, were achieved.
AB - We report the preparation of high two-dimensional electron gas (2DEG) concentration and mobility in double delta doping, single quantum well GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Superior in gate voltage swing (3 V), saturation current density, and extrinsic transconductance to those of conventional InxGa1-xAs/GaAs pseudomorphic heterostructures with similar gate length (2 μm) ever reported, were achieved.
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U2 - 10.1143/JJAP.32.L303
DO - 10.1143/JJAP.32.L303
M3 - Article
AN - SCOPUS:0027557517
SN - 0021-4922
VL - 32
SP - L303-L305
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 3 A
ER -