High performance double delta doping gaas/in0.25Ga0.75as/gaas pseudomorphic heterostructure

M. Shieh, W. C. Hsu, C. L. Wu, T. S. Wu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We report the preparation of high two-dimensional electron gas (2DEG) concentration and mobility in double delta doping, single quantum well GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Superior in gate voltage swing (3 V), saturation current density, and extrinsic transconductance to those of conventional InxGa1-xAs/GaAs pseudomorphic heterostructures with similar gate length (2 μm) ever reported, were achieved.

Original languageEnglish
Pages (from-to)L303-L305
JournalJapanese Journal of Applied Physics
Issue number3 A
Publication statusPublished - 1993 Mar

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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