High-performance GaN metal-insulator-semiconductor ultraviolet photodetectors using gallium oxide as gate layer

Ming Lun Lee, T. S. Mue, F. W. Huang, J. H. Yang, J. K. Sheu

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

In this study, gallium nitride (GaN)-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a gallium oxide (GaO x) gate layer formed by alternating current bias-assisted photoelectrochemical oxidation of n-GaN are presented. By introducing the GaOx gate layer to the GaN MIS UV PDs, the leakage current is reduced and a much larger UV-to-visible rejection ratio (RUV/vis) of spectral responsivity is achieved. In addition, a bias-dependent spectral response results in marked increase of the RUV/vis with bias voltage up to ∼10 5. The bias-dependent responsivity suggests the possible existence of internal gain in of the GaN MIS PDs.

Original languageEnglish
Pages (from-to)12658-12663
Number of pages6
JournalOptics Express
Volume19
Issue number13
DOIs
Publication statusPublished - 2011 Jun 20

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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