High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers

Engineering & Materials Science

• Heterojunctions 100%
• Field effect transistors 81%
• High electron mobility transistors 59%
• Nitrides 30%
• Cutoff frequency 29%
• Leakage currents 27%

Chemical Compounds

• Field Effect 76%
• Current Gain 68%
• Drain Current 59%
• Leakage Current 50%
• Length 22%
• Surface 12%

Physics & Astronomy

• field effect transistors 60%
• performance 33%
• nitrides 17%
• cut-off 15%
• leakage 15%
• direct current 14%
• oscillations 12%