@inproceedings{4de31dbcb70b40cb8b1544c43a72ab24,
title = "High performance GeSi quantum-well PMOS on SIMOX",
abstract = "A new quantum-well GeSi-SIMOX PMOSFET is presented. The device consists of a Si/Ge0.3Si0.7/Si quantum well, which is grown pseudomorphically on a SIMOX substrate. The effective channel mobility of this device has been found to be 90% higher than that of an identically processed conventional SIMOX PMOSFET.",
author = "Nayak, {D. K.} and Park, {J. S.} and Woo, {J. C.S.} and Wang, {K. L.} and Yabiku, {G. K.} and MacWilliams, {K. P.}",
note = "Publisher Copyright: {\textcopyright} 1992 IEEE. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.; 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 ; Conference date: 13-12-1992 Through 16-12-1992",
year = "1992",
doi = "10.1109/IEDM.1992.307473",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "777--780",
booktitle = "1992 International Technical Digest on Electron Devices Meeting, IEDM 1992",
address = "United States",
}