High-performance heterostructure field-effect transistors (HFETs) with step-modulationed InGaAs channel structure

Wen-Chau Liu, Lih Wen Laih, Wen Lung Chang, Shiou Ying Cheng

Research output: Contribution to journalArticle

Abstract

Two types of new heterostructure field-effect transistors are fabricated and investigated in this paper. The pseudomorphic InxGa1-xAs (x≤0.2) and Al0.3Ga0.7As (or In0.49Ga0.51P) layers are used as the active channel and Schottky contact layer, respectively, in these studied devices. Owing to the large conduction band discontinuity (ΔEC) at InxGa1-xAs/Al0.3Ga0.7As and InxGa1-xAs/In0.49Ga0.51P interfaces, the carriers can be easily confined in the channels. Thus the device characteristics such as drain saturation current, breakdown voltage and transconductance (gm) are improved. Furthermore, by varying the doping concentration or In composition in the channel, both the high carrier density and high output current may be obtained as a result of the significant carrier accumulation effect. From the experimental results, these studied devices show their great potential in high-power and high-speed circuit applications.

Original languageEnglish
Pages (from-to)89-93
Number of pages5
JournalMaterials Chemistry and Physics
Volume52
Issue number1
DOIs
Publication statusPublished - 1998 Jan 1

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Transconductance
High electron mobility transistors
Conduction bands
Electric breakdown
Carrier concentration
field effect transistors
Doping (additives)
Networks (circuits)
Chemical analysis
transconductance
electrical faults
electric contacts
discontinuity
conduction bands
high speed
saturation
output

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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title = "High-performance heterostructure field-effect transistors (HFETs) with step-modulationed InGaAs channel structure",
abstract = "Two types of new heterostructure field-effect transistors are fabricated and investigated in this paper. The pseudomorphic InxGa1-xAs (x≤0.2) and Al0.3Ga0.7As (or In0.49Ga0.51P) layers are used as the active channel and Schottky contact layer, respectively, in these studied devices. Owing to the large conduction band discontinuity (ΔEC) at InxGa1-xAs/Al0.3Ga0.7As and InxGa1-xAs/In0.49Ga0.51P interfaces, the carriers can be easily confined in the channels. Thus the device characteristics such as drain saturation current, breakdown voltage and transconductance (gm) are improved. Furthermore, by varying the doping concentration or In composition in the channel, both the high carrier density and high output current may be obtained as a result of the significant carrier accumulation effect. From the experimental results, these studied devices show their great potential in high-power and high-speed circuit applications.",
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High-performance heterostructure field-effect transistors (HFETs) with step-modulationed InGaAs channel structure. / Liu, Wen-Chau; Laih, Lih Wen; Chang, Wen Lung; Cheng, Shiou Ying.

In: Materials Chemistry and Physics, Vol. 52, No. 1, 01.01.1998, p. 89-93.

Research output: Contribution to journalArticle

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