High-performance InGaP/InGaAs/GaAs step-compositioned doped-channel field-effect transistor (SCDCFET)

Lih Wen Laih; Shiou Ying Cheng; Wei Chou Wang; Po Hung Lin; Jina Yuh Chen; Wen Chau Liu; Wei Lin

doi:10.1049/el:19970030

High-performance InGaP/InGaAs/GaAs step-compositioned doped-channel field-effect transistor (SCDCFET)

Lih Wen Laih, Shiou Ying Cheng, Wei Chou Wang, Po Hung Lin, Jina Yuh Chen, Wen Chau Liu, Wei Lin

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

A new i-In_0.49Ga_0.515P/n-In_xGa_1-xAs/i-GaAs step-compositioned doped-channel field-effect transistor (SCDCFET) has been fabricated and studied. Owing to the presence of a V-shaped energy band formed by the step-compositioned doped-channel structure, a large current density, a large gate voltage swing with high average transconductance and a high breakdown voltage are obtained. For a 1 × 80μm² gate dimension, a maximum drain saturation current of 830mA/mm, a maximum transconductance of 188mS/mm, a high gate breakdown voltage of 34V, and a large gate voltage swing of 3.3V with transconductance > 150mS/mm are achieved. These performances show that the studied device has a good potentiality for high-speed, high-power, and large input signal circuit applications.

Original language	English
Pages (from-to)	98-99
Number of pages	2
Journal	Electronics Letters
Volume	33
Issue number	1
DOIs	https://doi.org/10.1049/el:19970030
Publication status	Published - 1997 Jan 2

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19970030

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title = "High-performance InGaP/InGaAs/GaAs step-compositioned doped-channel field-effect transistor (SCDCFET)",

abstract = "A new i-In0.49Ga0.515P/n-InxGa1-xAs/i-GaAs step-compositioned doped-channel field-effect transistor (SCDCFET) has been fabricated and studied. Owing to the presence of a V-shaped energy band formed by the step-compositioned doped-channel structure, a large current density, a large gate voltage swing with high average transconductance and a high breakdown voltage are obtained. For a 1 × 80μm2 gate dimension, a maximum drain saturation current of 830mA/mm, a maximum transconductance of 188mS/mm, a high gate breakdown voltage of 34V, and a large gate voltage swing of 3.3V with transconductance > 150mS/mm are achieved. These performances show that the studied device has a good potentiality for high-speed, high-power, and large input signal circuit applications.",

author = "Laih, {Lih Wen} and Cheng, {Shiou Ying} and Wang, {Wei Chou} and Lin, {Po Hung} and Chen, {Jina Yuh} and Liu, {Wen Chau} and Wei Lin",

year = "1997",

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doi = "10.1049/el:19970030",

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T1 - High-performance InGaP/InGaAs/GaAs step-compositioned doped-channel field-effect transistor (SCDCFET)

AU - Laih, Lih Wen

AU - Cheng, Shiou Ying

AU - Wang, Wei Chou

AU - Lin, Po Hung

AU - Chen, Jina Yuh

AU - Liu, Wen Chau

AU - Lin, Wei

PY - 1997/1/2

Y1 - 1997/1/2

N2 - A new i-In0.49Ga0.515P/n-InxGa1-xAs/i-GaAs step-compositioned doped-channel field-effect transistor (SCDCFET) has been fabricated and studied. Owing to the presence of a V-shaped energy band formed by the step-compositioned doped-channel structure, a large current density, a large gate voltage swing with high average transconductance and a high breakdown voltage are obtained. For a 1 × 80μm2 gate dimension, a maximum drain saturation current of 830mA/mm, a maximum transconductance of 188mS/mm, a high gate breakdown voltage of 34V, and a large gate voltage swing of 3.3V with transconductance > 150mS/mm are achieved. These performances show that the studied device has a good potentiality for high-speed, high-power, and large input signal circuit applications.

AB - A new i-In0.49Ga0.515P/n-InxGa1-xAs/i-GaAs step-compositioned doped-channel field-effect transistor (SCDCFET) has been fabricated and studied. Owing to the presence of a V-shaped energy band formed by the step-compositioned doped-channel structure, a large current density, a large gate voltage swing with high average transconductance and a high breakdown voltage are obtained. For a 1 × 80μm2 gate dimension, a maximum drain saturation current of 830mA/mm, a maximum transconductance of 188mS/mm, a high gate breakdown voltage of 34V, and a large gate voltage swing of 3.3V with transconductance > 150mS/mm are achieved. These performances show that the studied device has a good potentiality for high-speed, high-power, and large input signal circuit applications.

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High-performance InGaP/InGaAs/GaAs step-compositioned doped-channel field-effect transistor (SCDCFET)

Abstract

All Science Journal Classification (ASJC) codes

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