High-performance InGaP/InxGa1-xAs HEMT with an inverted delta-doped V-shaped channel structure

Wen-Chau Liu, Wen Lung Chang, Wen Shiung Lour, Hsi Jen Pan, Wei Chou Wang, Jing Yuh Chen, Kuo Hui Yu, Shun Ching Feng

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

This letter reports a new and high-performance InGaP/InxGa1-xAs high electron mobility transistors (HEMT's) with an inverted delta-doped V-shaped channel. Due to the presence of V-shaped inverted delta-doped InGaP/InxGa1-xAs structure, the good carrier confinement and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm at 300 K. Meanwhile, the studied device exhibits a good microwave frequency linearity.

Original languageEnglish
Pages (from-to)548-550
Number of pages3
JournalIEEE Electron Device Letters
Volume20
Issue number11
DOIs
Publication statusPublished - 1999 Nov 1

Fingerprint

Transconductance
High electron mobility transistors
Microwave frequencies
Electric breakdown
Current density

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Liu, W-C., Chang, W. L., Lour, W. S., Pan, H. J., Wang, W. C., Chen, J. Y., ... Feng, S. C. (1999). High-performance InGaP/InxGa1-xAs HEMT with an inverted delta-doped V-shaped channel structure. IEEE Electron Device Letters, 20(11), 548-550. https://doi.org/10.1109/55.798039
Liu, Wen-Chau ; Chang, Wen Lung ; Lour, Wen Shiung ; Pan, Hsi Jen ; Wang, Wei Chou ; Chen, Jing Yuh ; Yu, Kuo Hui ; Feng, Shun Ching. / High-performance InGaP/InxGa1-xAs HEMT with an inverted delta-doped V-shaped channel structure. In: IEEE Electron Device Letters. 1999 ; Vol. 20, No. 11. pp. 548-550.
@article{a996e301ba314648bc92bef4944e84f4,
title = "High-performance InGaP/InxGa1-xAs HEMT with an inverted delta-doped V-shaped channel structure",
abstract = "This letter reports a new and high-performance InGaP/InxGa1-xAs high electron mobility transistors (HEMT's) with an inverted delta-doped V-shaped channel. Due to the presence of V-shaped inverted delta-doped InGaP/InxGa1-xAs structure, the good carrier confinement and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm at 300 K. Meanwhile, the studied device exhibits a good microwave frequency linearity.",
author = "Wen-Chau Liu and Chang, {Wen Lung} and Lour, {Wen Shiung} and Pan, {Hsi Jen} and Wang, {Wei Chou} and Chen, {Jing Yuh} and Yu, {Kuo Hui} and Feng, {Shun Ching}",
year = "1999",
month = "11",
day = "1",
doi = "10.1109/55.798039",
language = "English",
volume = "20",
pages = "548--550",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",

}

Liu, W-C, Chang, WL, Lour, WS, Pan, HJ, Wang, WC, Chen, JY, Yu, KH & Feng, SC 1999, 'High-performance InGaP/InxGa1-xAs HEMT with an inverted delta-doped V-shaped channel structure', IEEE Electron Device Letters, vol. 20, no. 11, pp. 548-550. https://doi.org/10.1109/55.798039

High-performance InGaP/InxGa1-xAs HEMT with an inverted delta-doped V-shaped channel structure. / Liu, Wen-Chau; Chang, Wen Lung; Lour, Wen Shiung; Pan, Hsi Jen; Wang, Wei Chou; Chen, Jing Yuh; Yu, Kuo Hui; Feng, Shun Ching.

In: IEEE Electron Device Letters, Vol. 20, No. 11, 01.11.1999, p. 548-550.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High-performance InGaP/InxGa1-xAs HEMT with an inverted delta-doped V-shaped channel structure

AU - Liu, Wen-Chau

AU - Chang, Wen Lung

AU - Lour, Wen Shiung

AU - Pan, Hsi Jen

AU - Wang, Wei Chou

AU - Chen, Jing Yuh

AU - Yu, Kuo Hui

AU - Feng, Shun Ching

PY - 1999/11/1

Y1 - 1999/11/1

N2 - This letter reports a new and high-performance InGaP/InxGa1-xAs high electron mobility transistors (HEMT's) with an inverted delta-doped V-shaped channel. Due to the presence of V-shaped inverted delta-doped InGaP/InxGa1-xAs structure, the good carrier confinement and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm at 300 K. Meanwhile, the studied device exhibits a good microwave frequency linearity.

AB - This letter reports a new and high-performance InGaP/InxGa1-xAs high electron mobility transistors (HEMT's) with an inverted delta-doped V-shaped channel. Due to the presence of V-shaped inverted delta-doped InGaP/InxGa1-xAs structure, the good carrier confinement and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm at 300 K. Meanwhile, the studied device exhibits a good microwave frequency linearity.

UR - http://www.scopus.com/inward/record.url?scp=0033221579&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033221579&partnerID=8YFLogxK

U2 - 10.1109/55.798039

DO - 10.1109/55.798039

M3 - Article

VL - 20

SP - 548

EP - 550

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 11

ER -