High-performance InGaP/InxGa1-xAs HEMT with an inverted delta-doped V-shaped channel structure

Wen Chau Liu; Wen Lung Chang; Wen Shiung Lour; Hsi Jen Pan; Wei Chou Wang; Jing Yuh Chen; Kuo Hui Yu; Shun Ching Feng

doi:10.1109/55.798039

High-performance InGaP/In_xGa_1-xAs HEMT with an inverted delta-doped V-shaped channel structure

Wen Chau Liu, Wen Lung Chang, Wen Shiung Lour, Hsi Jen Pan, Wei Chou Wang, Jing Yuh Chen, Kuo Hui Yu, Shun Ching Feng

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

This letter reports a new and high-performance InGaP/In_xGa_1-xAs high electron mobility transistors (HEMT's) with an inverted delta-doped V-shaped channel. Due to the presence of V-shaped inverted delta-doped InGaP/In_xGa_1-xAs structure, the good carrier confinement and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm²) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at V_GS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm at 300 K. Meanwhile, the studied device exhibits a good microwave frequency linearity.

Original language	English
Pages (from-to)	548-550
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	20
Issue number	11
DOIs	https://doi.org/10.1109/55.798039
Publication status	Published - 1999 Nov

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.798039

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title = "High-performance InGaP/InxGa1-xAs HEMT with an inverted delta-doped V-shaped channel structure",

abstract = "This letter reports a new and high-performance InGaP/InxGa1-xAs high electron mobility transistors (HEMT's) with an inverted delta-doped V-shaped channel. Due to the presence of V-shaped inverted delta-doped InGaP/InxGa1-xAs structure, the good carrier confinement and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm at 300 K. Meanwhile, the studied device exhibits a good microwave frequency linearity.",

author = "Liu, {Wen Chau} and Chang, {Wen Lung} and Lour, {Wen Shiung} and Pan, {Hsi Jen} and Wang, {Wei Chou} and Chen, {Jing Yuh} and Yu, {Kuo Hui} and Feng, {Shun Ching}",

note = "Funding Information: Manuscript received April 7, 1999; revised July 8, 1999. This work was supported by the National Science Council of the R.O.C. under Contract NSC 88-2215-E-006-010. W.-C. Liu, W.-L. Chang, H.-J. Pan, W.-C. Wang, J.-Y. Chen, K.-H. Yu, and S.-C. Feng are with the Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, R.O.C. (e-mail: [email protected]). W.-S. Lour is with the Department of Electrical Engineering, National Taiwan-Ocean University, Keelung, Taiwan, R.O.C. Publisher Item Identifier S 0741-3106(99)08735-2.",

year = "1999",

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T1 - High-performance InGaP/InxGa1-xAs HEMT with an inverted delta-doped V-shaped channel structure

AU - Liu, Wen Chau

AU - Chang, Wen Lung

AU - Lour, Wen Shiung

AU - Pan, Hsi Jen

AU - Wang, Wei Chou

AU - Chen, Jing Yuh

AU - Yu, Kuo Hui

AU - Feng, Shun Ching

N1 - Funding Information: Manuscript received April 7, 1999; revised July 8, 1999. This work was supported by the National Science Council of the R.O.C. under Contract NSC 88-2215-E-006-010. W.-C. Liu, W.-L. Chang, H.-J. Pan, W.-C. Wang, J.-Y. Chen, K.-H. Yu, and S.-C. Feng are with the Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, R.O.C. (e-mail: [email protected]). W.-S. Lour is with the Department of Electrical Engineering, National Taiwan-Ocean University, Keelung, Taiwan, R.O.C. Publisher Item Identifier S 0741-3106(99)08735-2.

PY - 1999/11

Y1 - 1999/11

N2 - This letter reports a new and high-performance InGaP/InxGa1-xAs high electron mobility transistors (HEMT's) with an inverted delta-doped V-shaped channel. Due to the presence of V-shaped inverted delta-doped InGaP/InxGa1-xAs structure, the good carrier confinement and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm at 300 K. Meanwhile, the studied device exhibits a good microwave frequency linearity.

AB - This letter reports a new and high-performance InGaP/InxGa1-xAs high electron mobility transistors (HEMT's) with an inverted delta-doped V-shaped channel. Due to the presence of V-shaped inverted delta-doped InGaP/InxGa1-xAs structure, the good carrier confinement and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm at 300 K. Meanwhile, the studied device exhibits a good microwave frequency linearity.

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High-performance InGaP/In_xGa_1-xAs HEMT with an inverted delta-doped V-shaped channel structure

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