The InGaP/InGaAs single and double delta-doped pseudomorphic high electron mobility transistor (δ-PHEMT) grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) have been fabricated and investigated. Based on the employment of the wide-gap InGaP Schottky layer and delta-doped carrier supplier, the high breakdown voltages together with good device characteristics are obtained simultaneously. Furthermore, the newly designed V-shaped InGaAs channel can enhance the carrier confinement effect and increase the product of carrier concentration and mobility. Experimentally, for 1×100 μm2 devices, the gate-to-drain breakdown voltages larger than 40 (30) V, the transconductances of 90 (201) mS/mm, and the maximum current densities of 646 (846) mA/mm are achieved for the studied single and double δ-PHEMT, respectively. Meanwhile, the measured fT and fmax are 12 (16) GHz and 28.4 (34) GHz, respectively.
|Journal||Journal De Physique. IV : JP|
|Publication status||Published - 2001|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)