High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO2 gate stack structure

Ming wen Ma, Tien Sheng Chao, Chun Jung Su, Woei Cherng Wu, Kuo Hsing Kao, Tan Fu Lei

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral-crystallization (MILC) channel layer and TaN/HO2 gate stack is demonstrated for the first time. The devices of low threshold voltage VTH ∼0.095 V, excellent subthreshold swing S.S. ∼83 mV/dec., and high field-effect mobility μFE ∼240 cm2/V ·s are achieved without any defect passivation methods. These significant improvements are due to the MILC channel film and the very high gate-capacitance density provided by HfO2 gate dielectric with the effective oxide thickness of 5.12 nm.

Original languageEnglish
Pages (from-to)592-594
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number6
DOIs
Publication statusPublished - 2008 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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