High-Performance Non-Volatile Flash Photomemory via Highly Oriented Quasi-2D Perovskite

Ya Hui Chao, Jian Cheng Chen, Dong Lin Yang, You Jie Tseng, Chao Hsien Hsu, Jung Yao Chen

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

Solution-processable organic–inorganic hybrid perovskite materials have been applied to a variety of optoelectronic devices due to its long exciton lifetime and small binding energy. It has emerged as promising front-runners for next-generation non-volatile flash photomemory devices. However, the effect of crystal orientation of perovskite on the performance of photomemory still has not fully developed. Herein, non-volatile flash photomemory with quasi-2D perovskite/polystyrene-block-poly(ethylene oxide) (PS-b-PEO) as photoactive floating-gate and p-type semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT) as the chare-transporting layer is successfully demonstrated. By adding phenylethylammonium bromide (PEABr) in formamidinium lead bromide perovskite (FAPbBr3), the crystal orientation of quasi-2D perovskite is highly improved, which results in raised charge transfer efficiency from 76% to 90% compared to the pure FAPbBr3. Furthermore, ON/OFF current ratio of 104, low photo-programming time of 5 ms under light intensity of 0.85 mW cm−2, charge transfer rate of 0.063 ns−1, and data storage capacity of over 7 bits (128 levels) in one cell can be achieved. In addition, the correlation between photo-responsive current and photoluminescence (PL) is first examined by in operando PL measurement, which provides a new platform to explore the charge transfer process in photomemory.

Original languageEnglish
Article number2112521
JournalAdvanced Functional Materials
Volume32
Issue number19
DOIs
Publication statusPublished - 2022 May 9

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • General Chemistry
  • General Materials Science
  • Electrochemistry
  • Biomaterials

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