High-performance n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier gate heterostructure field-effect transistor

Kuo Hui Yu; Wen Chau Liu; Kun Wei Lin; Kuan Po Lin; Chih Hung Yen; Cheng Zu Wu; Chem Yuan Chen; Chih Kai Wang

doi:10.1109/COMMAD.2000.1022934

High-performance n⁺-GaAs/p⁺-In_0.49Ga_0.51P/n-GaAs high-barrier gate heterostructure field-effect transistor

Kuo Hui Yu, Wen Chau Liu, Kun Wei Lin, Kuan Po Lin, Chih Hung Yen, Cheng Zu Wu, Chem Yuan Chen, Chih Kai Wang

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new heterostructure field-effect transistor (HFET) using an n⁺-GaAs/p⁺-In_0.49Ga_0.51P/n-GaAs high-barrier-gate structure has been fabricated successfully and demonstrated. The heavily doped p⁺ n_0.49Ga_0.51P layer is introduced to increase the barrier height and to suppress the tunneling current. Therefore, the leakage current is reduced and breakdown voltage is improved substantially. Experimentally, for a lxl00 μm² device, a high gate-drain breakdown voltage of 52 V and high drain-source operation voltage of 20 V with low leakage current are obtained. The high breakdown characteristics of the studied device indicate the device with n⁺-GaAs/p⁺-In_0.49Ga_0.51P/n-GaAs high-barrier-gate structure is suitable for high-power circuit applications.

Original language	English
Title of host publication	COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
Editors	Leonard D. Broekman, Brian F. Usher, John D. Riley
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	230-233
Number of pages	4
ISBN (Electronic)	0780366980
DOIs	https://doi.org/10.1109/COMMAD.2000.1022934
Publication status	Published - 2000
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia Duration: 2000 Dec 6 → 2000 Dec 8

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume	2000-January

Other

Other	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
Country/Territory	Australia
City	Bundoora
Period	00-12-06 → 00-12-08

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/COMMAD.2000.1022934

Cite this

Yu, K. H., Liu, W. C., Lin, K. W., Lin, K. P., Yen, C. H., Wu, C. Z., Chen, C. Y., & Wang, C. K. (2000). High-performance n⁺-GaAs/p⁺-In_0.49Ga_0.51P/n-GaAs high-barrier gate heterostructure field-effect transistor. In L. D. Broekman, B. F. Usher, & J. D. Riley (Eds.), COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices (pp. 230-233). Article 1022934 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2000-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2000.1022934

Yu, Kuo Hui ; Liu, Wen Chau ; Lin, Kun Wei et al. / High-performance n⁺-GaAs/p⁺-In_0.49Ga_0.51P/n-GaAs high-barrier gate heterostructure field-effect transistor. COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. editor / Leonard D. Broekman ; Brian F. Usher ; John D. Riley. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 230-233 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

@inproceedings{7d3c62a6260d4b6c8d42fb719ecfcd75,

title = "High-performance n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier gate heterostructure field-effect transistor",

abstract = "A new heterostructure field-effect transistor (HFET) using an n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier-gate structure has been fabricated successfully and demonstrated. The heavily doped p+ n0.49Ga0.51P layer is introduced to increase the barrier height and to suppress the tunneling current. Therefore, the leakage current is reduced and breakdown voltage is improved substantially. Experimentally, for a lxl00 μm2 device, a high gate-drain breakdown voltage of 52 V and high drain-source operation voltage of 20 V with low leakage current are obtained. The high breakdown characteristics of the studied device indicate the device with n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier-gate structure is suitable for high-power circuit applications.",

author = "Yu, {Kuo Hui} and Liu, {Wen Chau} and Lin, {Kun Wei} and Lin, {Kuan Po} and Yen, {Chih Hung} and Wu, {Cheng Zu} and Chen, {Chem Yuan} and Wang, {Chih Kai}",

note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 ; Conference date: 06-12-2000 Through 08-12-2000",

year = "2000",

doi = "10.1109/COMMAD.2000.1022934",

language = "English",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "230--233",

editor = "Broekman, {Leonard D.} and Usher, {Brian F.} and Riley, {John D.}",

booktitle = "COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices",

address = "United States",

}

Yu, KH, Liu, WC, Lin, KW, Lin, KP, Yen, CH, Wu, CZ, Chen, CY & Wang, CK 2000, High-performance n⁺-GaAs/p⁺-In_0.49Ga_0.51P/n-GaAs high-barrier gate heterostructure field-effect transistor. in LD Broekman, BF Usher & JD Riley (eds), COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices., 1022934, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, vol. 2000-January, Institute of Electrical and Electronics Engineers Inc., pp. 230-233, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000, Bundoora, Australia, 00-12-06. https://doi.org/10.1109/COMMAD.2000.1022934

High-performance n⁺-GaAs/p⁺-In_0.49Ga_0.51P/n-GaAs high-barrier gate heterostructure field-effect transistor. / Yu, Kuo Hui; Liu, Wen Chau; Lin, Kun Wei et al.
COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. ed. / Leonard D. Broekman; Brian F. Usher; John D. Riley. Institute of Electrical and Electronics Engineers Inc., 2000. p. 230-233 1022934 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2000-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - High-performance n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier gate heterostructure field-effect transistor

AU - Yu, Kuo Hui

AU - Liu, Wen Chau

AU - Lin, Kun Wei

AU - Lin, Kuan Po

AU - Yen, Chih Hung

AU - Wu, Cheng Zu

AU - Chen, Chem Yuan

AU - Wang, Chih Kai

PY - 2000

Y1 - 2000

N2 - A new heterostructure field-effect transistor (HFET) using an n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier-gate structure has been fabricated successfully and demonstrated. The heavily doped p+ n0.49Ga0.51P layer is introduced to increase the barrier height and to suppress the tunneling current. Therefore, the leakage current is reduced and breakdown voltage is improved substantially. Experimentally, for a lxl00 μm2 device, a high gate-drain breakdown voltage of 52 V and high drain-source operation voltage of 20 V with low leakage current are obtained. The high breakdown characteristics of the studied device indicate the device with n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier-gate structure is suitable for high-power circuit applications.

AB - A new heterostructure field-effect transistor (HFET) using an n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier-gate structure has been fabricated successfully and demonstrated. The heavily doped p+ n0.49Ga0.51P layer is introduced to increase the barrier height and to suppress the tunneling current. Therefore, the leakage current is reduced and breakdown voltage is improved substantially. Experimentally, for a lxl00 μm2 device, a high gate-drain breakdown voltage of 52 V and high drain-source operation voltage of 20 V with low leakage current are obtained. The high breakdown characteristics of the studied device indicate the device with n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier-gate structure is suitable for high-power circuit applications.

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M3 - Conference contribution

AN - SCOPUS:84949760921

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 230

EP - 233

BT - COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices

A2 - Broekman, Leonard D.

A2 - Usher, Brian F.

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PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000

Y2 - 6 December 2000 through 8 December 2000

ER -

Yu KH, Liu WC, Lin KW, Lin KP, Yen CH, Wu CZ et al. High-performance n⁺-GaAs/p⁺-In_0.49Ga_0.51P/n-GaAs high-barrier gate heterostructure field-effect transistor. In Broekman LD, Usher BF, Riley JD, editors, COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. Institute of Electrical and Electronics Engineers Inc. 2000. p. 230-233. 1022934. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2000.1022934