High-performance n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier gate heterostructure field-effect transistor

Kuo Hui Yu, Wen Chau Liu, Kun Wei Lin, Kuan Po Lin, Chih Hung Yen, Cheng Zu Wu, Chem Yuan Chen, Chih Kai Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution


A new heterostructure field-effect transistor (HFET) using an n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier-gate structure has been fabricated successfully and demonstrated. The heavily doped p+ n0.49Ga0.51P layer is introduced to increase the barrier height and to suppress the tunneling current. Therefore, the leakage current is reduced and breakdown voltage is improved substantially. Experimentally, for a lxl00 μm2 device, a high gate-drain breakdown voltage of 52 V and high drain-source operation voltage of 20 V with low leakage current are obtained. The high breakdown characteristics of the studied device indicate the device with n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier-gate structure is suitable for high-power circuit applications.

Original languageEnglish
Title of host publicationCOMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
EditorsLeonard D. Broekman, Brian F. Usher, John D. Riley
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780366980
Publication statusPublished - 2000
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia
Duration: 2000 Dec 62000 Dec 8

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD


OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


Dive into the research topics of 'High-performance n<sup>+</sup>-GaAs/p<sup>+</sup>-In<sub>0.49</sub>Ga<sub>0.51</sub>P/n-GaAs high-barrier gate heterostructure field-effect transistor'. Together they form a unique fingerprint.

Cite this