High-performance n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier gate heterostructure field-effect transistor

Kuo Hui Yu, Wen-Chau Liu, Kun Wei Lin, Kuan Po Lin, Chih Hung Yen, Cheng Zu Wu, Chem Yuan Chen, Chih Kai Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new heterostructure field-effect transistor (HFET) using an n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier-gate structure has been fabricated successfully and demonstrated. The heavily doped p+ n0.49Ga0.51P layer is introduced to increase the barrier height and to suppress the tunneling current. Therefore, the leakage current is reduced and breakdown voltage is improved substantially. Experimentally, for a lxl00 μm2 device, a high gate-drain breakdown voltage of 52 V and high drain-source operation voltage of 20 V with low leakage current are obtained. The high breakdown characteristics of the studied device indicate the device with n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier-gate structure is suitable for high-power circuit applications.

Original languageEnglish
Title of host publicationCOMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
EditorsLeonard D. Broekman, Brian F. Usher, John D. Riley
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages230-233
Number of pages4
ISBN (Electronic)0780366980
DOIs
Publication statusPublished - 2000 Jan 1
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia
Duration: 2000 Dec 62000 Dec 8

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume2000-January

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
CountryAustralia
CityBundoora
Period00-12-0600-12-08

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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