High performance of Schottky barriers for Cu contacted with InGaP/GaAs layers

Ching Ting Lee, Chang Da Tsai, Hung Pin Shiao

Research output: Contribution to journalArticlepeer-review


We present the characteristics of Cu Schottky contacts on wide band gap InGaP semiconductors with and without sulfur treatment before Schottky contact deposition, and investigate the influence of post-heat treatment on the Schottky diodes. With sulfur treatment, the performance of Schottky diodes compared with samples without sulfur treatment is improved. However, a drastic degradation of the performances was observed in samples annealed at 500°C.

Original languageEnglish
Pages (from-to)251-253
Number of pages3
JournalOptical Materials
Issue number3
Publication statusPublished - 2000 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering


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