High performance of Schottky barriers for Cu contacted with InGaP/GaAs layers

Ching Ting Lee, Chang Da Tsai, Hung Pin Shiao

Research output: Contribution to journalArticlepeer-review

Abstract

We present the characteristics of Cu Schottky contacts on wide band gap InGaP semiconductors with and without sulfur treatment before Schottky contact deposition, and investigate the influence of post-heat treatment on the Schottky diodes. With sulfur treatment, the performance of Schottky diodes compared with samples without sulfur treatment is improved. However, a drastic degradation of the performances was observed in samples annealed at 500°C.

Original languageEnglish
Pages (from-to)251-253
Number of pages3
JournalOptical Materials
Volume14
Issue number3
DOIs
Publication statusPublished - 2000 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

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