High performance of Schottky barriers for Cu contacted with InGaP/GaAs layers

Ching Ting Lee; Chang Da Tsai; Hung Pin Shiao

doi:10.1016/S0925-3467(99)00147-0

High performance of Schottky barriers for Cu contacted with InGaP/GaAs layers

Ching Ting Lee
, Chang Da Tsai
, Hung Pin Shiao

Department of Photonics

Research output: Contribution to journal › Article › peer-review

Abstract

We present the characteristics of Cu Schottky contacts on wide band gap InGaP semiconductors with and without sulfur treatment before Schottky contact deposition, and investigate the influence of post-heat treatment on the Schottky diodes. With sulfur treatment, the performance of Schottky diodes compared with samples without sulfur treatment is improved. However, a drastic degradation of the performances was observed in samples annealed at 500°C.

Original language	English
Pages (from-to)	251-253
Number of pages	3
Journal	Optical Materials
Volume	14
Issue number	3
DOIs	https://doi.org/10.1016/S0925-3467(99)00147-0
Publication status	Published - 2000 Jul

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
General Computer Science
Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Electrical and Electronic Engineering

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10.1016/S0925-3467(99)00147-0

Cite this

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title = "High performance of Schottky barriers for Cu contacted with InGaP/GaAs layers",

abstract = "We present the characteristics of Cu Schottky contacts on wide band gap InGaP semiconductors with and without sulfur treatment before Schottky contact deposition, and investigate the influence of post-heat treatment on the Schottky diodes. With sulfur treatment, the performance of Schottky diodes compared with samples without sulfur treatment is improved. However, a drastic degradation of the performances was observed in samples annealed at 500°C.",

author = "Lee, \{Ching Ting\} and Tsai, \{Chang Da\} and Shiao, \{Hung Pin\}",

year = "2000",

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AU - Lee, Ching Ting

AU - Tsai, Chang Da

AU - Shiao, Hung Pin

PY - 2000/7

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N2 - We present the characteristics of Cu Schottky contacts on wide band gap InGaP semiconductors with and without sulfur treatment before Schottky contact deposition, and investigate the influence of post-heat treatment on the Schottky diodes. With sulfur treatment, the performance of Schottky diodes compared with samples without sulfur treatment is improved. However, a drastic degradation of the performances was observed in samples annealed at 500°C.

AB - We present the characteristics of Cu Schottky contacts on wide band gap InGaP semiconductors with and without sulfur treatment before Schottky contact deposition, and investigate the influence of post-heat treatment on the Schottky diodes. With sulfur treatment, the performance of Schottky diodes compared with samples without sulfur treatment is improved. However, a drastic degradation of the performances was observed in samples annealed at 500°C.

UR - https://www.scopus.com/pages/publications/0346056312

UR - https://www.scopus.com/pages/publications/0346056312#tab=citedBy

U2 - 10.1016/S0925-3467(99)00147-0

DO - 10.1016/S0925-3467(99)00147-0

M3 - Article

AN - SCOPUS:0346056312

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VL - 14

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EP - 253

JO - Optical Materials

JF - Optical Materials

IS - 3

ER -

High performance of Schottky barriers for Cu contacted with InGaP/GaAs layers

Abstract

All Science Journal Classification (ASJC) codes

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