High performance organic field-effect transistors

Wei Yang Chou, Yu Shen Mai, Chia Wei Kuo, Homg Long Cheng, Yi Ren Chen, Shih Ting Lin, Feng Yu Yang, Dun Yin Shu, Chi Chang Liao

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The following report presents innovative technique for surface modification and device construction of top-contact pentacene-based thin film transistors (TFTs) with saturation mobility about 2.0 cm2/Vs. In the experiment we have utilized PSPI as a modification layer presenting a non-polar interface on which the semiconductor, pentacene, could grow. The surface of the modification layers was exposed to a polarized ultraviolet light with dose ranging from 0.2 J to 8 J. Ultraviolet light was applied to achieve a non-polar surface on which high performance TFTs have been subsequently fabricated. The experimental results showed that the parasitic contact resistances of silver electrodes could be extracted by gated-transfer length method, and the corrected field-effect mobility of pentacene TFTs for linear region was as high as 2.25 cm2/Vs. In this study, we were able to control the surface energy of polymer-based gate dielectric layers and the surface energy of the PSPI layer increasing the energy from about 38 to 42 mJ/m2 by differentiating doses of polarized ultraviolet light. When the PSPI film was exposed to 1 J of polarized ultraviolet light, the surface energy of PSPI, measured by the contact angle method, was about 38 mJ/m2. The measured energy matched the theoretically calculated surface energy of a pentacene crystal. Hence, the higher mobility OTFTs with low surface energy gate dielectric were obtained by spin-coating the PSPI as a modifier.

Original languageEnglish
Title of host publicationOrganic Field-Effect Transistors V
Publication statusPublished - 2006
EventOrganic Field-Effect Transistors V - San Diego, CA, United States
Duration: 2006 Aug 132006 Aug 15

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherOrganic Field-Effect Transistors V
Country/TerritoryUnited States
CitySan Diego, CA

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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