Abstract
A strategy for high-performance OTFT gate insulators is a multi-layer structure. The composite insulator adjacent to pentacene minimized trapping at the interface and exhibits performance including on-off current ratio of about 10 5, threshold voltage of -10 V and mobility of 0.15 cm 2V- 1 s- 1.
Original language | English |
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Pages (from-to) | S355-S358 |
Journal | Journal of Materials Science: Materials in Electronics |
Volume | 20 |
Issue number | SUPPL. 1 |
DOIs | |
Publication status | Published - 2009 Jan |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering