High performance OTFTs using surface-modified nanocomposite dielectric gate insulator

Jun Jie Wang, Wen Hsi Lee, Jia Chung Ho, Tang Shiang Hu

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A strategy for high-performance OTFT gate insulators is a multi-layer structure. The composite insulator adjacent to pentacene minimized trapping at the interface and exhibits performance including on-off current ratio of about 10 5, threshold voltage of -10 V and mobility of 0.15 cm 2V- 1 s- 1.

Original languageEnglish
Pages (from-to)S355-S358
JournalJournal of Materials Science: Materials in Electronics
Volume20
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2009 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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