High performance OTFTs using surface-modified nanocomposite dielectric gate insulator

Jun Jie Wang; Wen Hsi Lee; Jia Chung Ho; Tang Shiang Hu

doi:10.1007/s10854-008-9621-5

High performance OTFTs using surface-modified nanocomposite dielectric gate insulator

Jun Jie Wang
, Wen Hsi Lee
, Jia Chung Ho
, Tang Shiang Hu

Master Degree Program on Nano-Integrated-Circuit Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A strategy for high-performance OTFT gate insulators is a multi-layer structure. The composite insulator adjacent to pentacene minimized trapping at the interface and exhibits performance including on-off current ratio of about 10 ⁵, threshold voltage of -10 V and mobility of 0.15 cm ²V- ¹ s- ¹.

Original language	English
Pages (from-to)	S355-S358
Journal	Journal of Materials Science: Materials in Electronics
Volume	20
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1007/s10854-008-9621-5
Publication status	Published - 2009 Jan

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1007/s10854-008-9621-5

Cite this

@article{c98cb11f508a4ac5aa23760ce457210c,

title = "High performance OTFTs using surface-modified nanocomposite dielectric gate insulator",

abstract = "A strategy for high-performance OTFT gate insulators is a multi-layer structure. The composite insulator adjacent to pentacene minimized trapping at the interface and exhibits performance including on-off current ratio of about 10 5, threshold voltage of -10 V and mobility of 0.15 cm 2V- 1 s- 1.",

author = "Wang, \{Jun Jie\} and Lee, \{Wen Hsi\} and Ho, \{Jia Chung\} and Hu, \{Tang Shiang\}",

note = "Funding Information: Acknowledgements This work was partially supported by National Science Council, the Republic of China under contract no. NSC96-2221-E-006-125.",

year = "2009",

month = jan,

doi = "10.1007/s10854-008-9621-5",

language = "English",

volume = "20",

pages = "S355--S358",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

number = "SUPPL. 1",

}

TY - JOUR

T1 - High performance OTFTs using surface-modified nanocomposite dielectric gate insulator

AU - Wang, Jun Jie

AU - Lee, Wen Hsi

AU - Ho, Jia Chung

AU - Hu, Tang Shiang

N1 - Funding Information: Acknowledgements This work was partially supported by National Science Council, the Republic of China under contract no. NSC96-2221-E-006-125.

PY - 2009/1

Y1 - 2009/1

N2 - A strategy for high-performance OTFT gate insulators is a multi-layer structure. The composite insulator adjacent to pentacene minimized trapping at the interface and exhibits performance including on-off current ratio of about 10 5, threshold voltage of -10 V and mobility of 0.15 cm 2V- 1 s- 1.

AB - A strategy for high-performance OTFT gate insulators is a multi-layer structure. The composite insulator adjacent to pentacene minimized trapping at the interface and exhibits performance including on-off current ratio of about 10 5, threshold voltage of -10 V and mobility of 0.15 cm 2V- 1 s- 1.

UR - https://www.scopus.com/pages/publications/71149089577

UR - https://www.scopus.com/pages/publications/71149089577#tab=citedBy

U2 - 10.1007/s10854-008-9621-5

DO - 10.1007/s10854-008-9621-5

M3 - Article

AN - SCOPUS:71149089577

SN - 0957-4522

VL - 20

SP - S355-S358

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - SUPPL. 1

ER -

High performance OTFTs using surface-modified nanocomposite dielectric gate insulator

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this