High-performance SiGe heterostructure FET grown on silicon-on-insulator

Pei Wei Chien, San Lein Wu, Shoou Jinn Chang, Shinji Koh, Yasuhiro Shiraki

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A novel SiGe/Si δ-doped-channel field effect transistors (DDCFETs) grown on silicon-on-insulator (SOI) have been successfully fabricated and demonstrated for the first time. No serious boron outdiffusion is found according to the SIMS analysis. The proposed device with a 1×100 μm2 gate reveals the gate voltage swing (GVS) as wide as 2.6 V. In addition, the reverse breakdown voltage between the Schottky gate and the δ-layer reaches 34 V, which is much larger than that of the same device structure grown on bulk Si. The high GVS and breakdown voltage are attributed to good carrier confinement not only by the V-shaped potential well formed by the heavily δ-doping but also SOI-induced effect.

Original languageEnglish
Pages (from-to)367-370
Number of pages4
JournalMaterials Science in Semiconductor Processing
Issue number1-3 SPEC. ISS.
Publication statusPublished - 2005 Feb

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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