High-performance SiGe heterostructure FET grown on silicon-on-insulator

Pei Wei Chien; San Lein Wu; Shoou Jinn Chang; Shinji Koh; Yasuhiro Shiraki

doi:10.1016/j.mssp.2004.09.097

High-performance SiGe heterostructure FET grown on silicon-on-insulator

Pei Wei Chien, San Lein Wu, Shoou Jinn Chang, Shinji Koh, Yasuhiro Shiraki

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A novel SiGe/Si δ-doped-channel field effect transistors (DDCFETs) grown on silicon-on-insulator (SOI) have been successfully fabricated and demonstrated for the first time. No serious boron outdiffusion is found according to the SIMS analysis. The proposed device with a 1×100 μm² gate reveals the gate voltage swing (GVS) as wide as 2.6 V. In addition, the reverse breakdown voltage between the Schottky gate and the δ-layer reaches 34 V, which is much larger than that of the same device structure grown on bulk Si. The high GVS and breakdown voltage are attributed to good carrier confinement not only by the V-shaped potential well formed by the heavily δ-doping but also SOI-induced effect.

Original language	English
Pages (from-to)	367-370
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	8
Issue number	1-3 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mssp.2004.09.097
Publication status	Published - 2005 Feb

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2004.09.097

Cite this

@article{de3040c0579645af87d2041e9f1d9a1e,

title = "High-performance SiGe heterostructure FET grown on silicon-on-insulator",

abstract = "A novel SiGe/Si δ-doped-channel field effect transistors (DDCFETs) grown on silicon-on-insulator (SOI) have been successfully fabricated and demonstrated for the first time. No serious boron outdiffusion is found according to the SIMS analysis. The proposed device with a 1×100 μm2 gate reveals the gate voltage swing (GVS) as wide as 2.6 V. In addition, the reverse breakdown voltage between the Schottky gate and the δ-layer reaches 34 V, which is much larger than that of the same device structure grown on bulk Si. The high GVS and breakdown voltage are attributed to good carrier confinement not only by the V-shaped potential well formed by the heavily δ-doping but also SOI-induced effect.",

author = "Chien, {Pei Wei} and Wu, {San Lein} and Chang, {Shoou Jinn} and Shinji Koh and Yasuhiro Shiraki",

note = "Funding Information: This work was supported by the National Science Council (NSC) of Taiwan, ROC, under contract NSC92-2215-E-230-001.",

year = "2005",

month = feb,

doi = "10.1016/j.mssp.2004.09.097",

language = "English",

volume = "8",

pages = "367--370",

journal = "Materials Science in Semiconductor Processing",

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T1 - High-performance SiGe heterostructure FET grown on silicon-on-insulator

AU - Chien, Pei Wei

AU - Wu, San Lein

AU - Chang, Shoou Jinn

AU - Koh, Shinji

AU - Shiraki, Yasuhiro

N1 - Funding Information: This work was supported by the National Science Council (NSC) of Taiwan, ROC, under contract NSC92-2215-E-230-001.

PY - 2005/2

Y1 - 2005/2

N2 - A novel SiGe/Si δ-doped-channel field effect transistors (DDCFETs) grown on silicon-on-insulator (SOI) have been successfully fabricated and demonstrated for the first time. No serious boron outdiffusion is found according to the SIMS analysis. The proposed device with a 1×100 μm2 gate reveals the gate voltage swing (GVS) as wide as 2.6 V. In addition, the reverse breakdown voltage between the Schottky gate and the δ-layer reaches 34 V, which is much larger than that of the same device structure grown on bulk Si. The high GVS and breakdown voltage are attributed to good carrier confinement not only by the V-shaped potential well formed by the heavily δ-doping but also SOI-induced effect.

AB - A novel SiGe/Si δ-doped-channel field effect transistors (DDCFETs) grown on silicon-on-insulator (SOI) have been successfully fabricated and demonstrated for the first time. No serious boron outdiffusion is found according to the SIMS analysis. The proposed device with a 1×100 μm2 gate reveals the gate voltage swing (GVS) as wide as 2.6 V. In addition, the reverse breakdown voltage between the Schottky gate and the δ-layer reaches 34 V, which is much larger than that of the same device structure grown on bulk Si. The high GVS and breakdown voltage are attributed to good carrier confinement not only by the V-shaped potential well formed by the heavily δ-doping but also SOI-induced effect.

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SN - 1369-8001

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JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 1-3 SPEC. ISS.

ER -

High-performance SiGe heterostructure FET grown on silicon-on-insulator

Abstract

All Science Journal Classification (ASJC) codes

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