High performance silicon carbide avalanchep-i-n ultraviolet photodiode with dual operation models

Mingkun Zhang, Kang L. Wang, Hexin Jiang, Rongdun Hong, Zhengyun Wu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Silicon carbide-based quasi-separated-absorption-multiplication ultraviolet avalanche photodiode (APD) with a small-area multiplication region and a large-area absorption region, which comprises of a p+nn- junction encircled by a p+n- junction, is proposed, and its optoelectronic performance is modelled. The modelling results show a 4H-SiC APD with high performance can be achieved. Moreover, when operated at a low reverse bias (e.g. 5.0 V), the photodiode has almost the same optoelectronic characteristics as the 4H-SiC p-i-n photodiode. It is noted that the device has benefited advantages of both conventional separate absorption and multiplication APD and p-i-n photodiode in the wavelength range of ultraviolet detection, which enable the dual operation models of the device.

Original languageEnglish
Pages (from-to)1474-1476
Number of pages3
JournalElectronics Letters
Volume52
Issue number17
DOIs
Publication statusPublished - 2016 Aug 18

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'High performance silicon carbide avalanchep-i-n ultraviolet photodiode with dual operation models'. Together they form a unique fingerprint.

Cite this