Abstract
High-performance films (400-1600 angstrom) were formed by anodizing sputtered tantalum oxide films. The electrical properties of these two-step oxidized and sputtered/anodized films are compared with those of films prepared by anodization or sputtering only. The sputtered/anodized tantalum oxide capacitors have lower dissipation factors, higher breakdown fields, narrower breakdown distributions, and lower leakage currents. The sputtered/anodized tantalum oxide films have shown to be useful for high-charge-storage capacitor applications.
| Original language | English |
|---|---|
| Pages (from-to) | 722-725 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 1988 Dec 1 |
| Event | Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA Duration: 1988 Dec 11 → 1988 Dec 14 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry