High performance sputtered/anodized tantalum oxide capacitors

S. G. Byeon, Yon-Hua Tzeng

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

High-performance films (400-1600 angstrom) were formed by anodizing sputtered tantalum oxide films. The electrical properties of these two-step oxidized and sputtered/anodized films are compared with those of films prepared by anodization or sputtering only. The sputtered/anodized tantalum oxide capacitors have lower dissipation factors, higher breakdown fields, narrower breakdown distributions, and lower leakage currents. The sputtered/anodized tantalum oxide films have shown to be useful for high-charge-storage capacitor applications.

Original languageEnglish
Pages (from-to)722-725
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1988 Dec

Fingerprint

Tantalum oxides
tantalum oxides
capacitors
Capacitors
Oxide films
oxide films
breakdown
Capacitor storage
anodizing
Anodic oxidation
Leakage currents
Sputtering
Electric properties
leakage
dissipation
sputtering
electrical properties
tantalum oxide

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

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abstract = "High-performance films (400-1600 angstrom) were formed by anodizing sputtered tantalum oxide films. The electrical properties of these two-step oxidized and sputtered/anodized films are compared with those of films prepared by anodization or sputtering only. The sputtered/anodized tantalum oxide capacitors have lower dissipation factors, higher breakdown fields, narrower breakdown distributions, and lower leakage currents. The sputtered/anodized tantalum oxide films have shown to be useful for high-charge-storage capacitor applications.",
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High performance sputtered/anodized tantalum oxide capacitors. / Byeon, S. G.; Tzeng, Yon-Hua.

In: Technical Digest - International Electron Devices Meeting, 12.1988, p. 722-725.

Research output: Contribution to journalArticle

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