High performance sputtered/anodized tantalum oxide capacitors

S. G. Byeon, Y. Tzeng

Research output: Contribution to journalConference articlepeer-review

14 Citations (Scopus)

Abstract

High-performance films (400-1600 angstrom) were formed by anodizing sputtered tantalum oxide films. The electrical properties of these two-step oxidized and sputtered/anodized films are compared with those of films prepared by anodization or sputtering only. The sputtered/anodized tantalum oxide capacitors have lower dissipation factors, higher breakdown fields, narrower breakdown distributions, and lower leakage currents. The sputtered/anodized tantalum oxide films have shown to be useful for high-charge-storage capacitor applications.

Original languageEnglish
Pages (from-to)722-725
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1988 Dec 1
EventTechnical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA
Duration: 1988 Dec 111988 Dec 14

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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