High performance three-terminal δ-doped GaAs negative resistance field-effect transistor based on real-space transfer

C. L. Wu, W. C. Hsu, M. S. Tsai, H. M. Shieh

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A three-terminal 5-doped GaAs real-space transfer transistor has been demonstrated by low-pressure metal organic chemical vapour deposition for the first time. The device has the advantages of: ease of growth and fabrication, large and adjustable peak-to-valley current ratio even at room temperature, extremely sharp charge injection, high transconductance, and high-power handling capability.

Original languageEnglish
Pages (from-to)1537-1539
Number of pages3
JournalElectronics Letters
Volume30
Issue number18
DOIs
Publication statusPublished - 1994 Jan 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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