High performance three-terminal δ-doped GaAs negative resistance field-effect transistor based on real-space transfer

C. L. Wu; W. C. Hsu; M. S. Tsai; H. M. Shieh

doi:10.1049/el:19941028

High performance three-terminal δ-doped GaAs negative resistance field-effect transistor based on real-space transfer

C. L. Wu, W. C. Hsu, M. S. Tsai, H. M. Shieh

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A three-terminal 5-doped GaAs real-space transfer transistor has been demonstrated by low-pressure metal organic chemical vapour deposition for the first time. The device has the advantages of: ease of growth and fabrication, large and adjustable peak-to-valley current ratio even at room temperature, extremely sharp charge injection, high transconductance, and high-power handling capability.

Original language	English
Pages (from-to)	1537-1539
Number of pages	3
Journal	Electronics Letters
Volume	30
Issue number	18
DOIs	https://doi.org/10.1049/el:19941028
Publication status	Published - 1994

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19941028

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title = "High performance three-terminal δ-doped GaAs negative resistance field-effect transistor based on real-space transfer",

abstract = "A three-terminal 5-doped GaAs real-space transfer transistor has been demonstrated by low-pressure metal organic chemical vapour deposition for the first time. The device has the advantages of: ease of growth and fabrication, large and adjustable peak-to-valley current ratio even at room temperature, extremely sharp charge injection, high transconductance, and high-power handling capability.",

author = "Wu, {C. L.} and Hsu, {W. C.} and Tsai, {M. S.} and Shieh, {H. M.}",

year = "1994",

doi = "10.1049/el:19941028",

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volume = "30",

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AU - Wu, C. L.

AU - Hsu, W. C.

AU - Tsai, M. S.

AU - Shieh, H. M.

PY - 1994

Y1 - 1994

N2 - A three-terminal 5-doped GaAs real-space transfer transistor has been demonstrated by low-pressure metal organic chemical vapour deposition for the first time. The device has the advantages of: ease of growth and fabrication, large and adjustable peak-to-valley current ratio even at room temperature, extremely sharp charge injection, high transconductance, and high-power handling capability.

AB - A three-terminal 5-doped GaAs real-space transfer transistor has been demonstrated by low-pressure metal organic chemical vapour deposition for the first time. The device has the advantages of: ease of growth and fabrication, large and adjustable peak-to-valley current ratio even at room temperature, extremely sharp charge injection, high transconductance, and high-power handling capability.

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JO - Electronics Letters

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High performance three-terminal δ-doped GaAs negative resistance field-effect transistor based on real-space transfer

Abstract

All Science Journal Classification (ASJC) codes

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