High Performance ZnO Thin-Film Transistors using High-k TiHfO Gate Dielectrics

Shui-Jinn Wang, N. C. Su, C. C Huang, Y. H. Chen, C. K Chiang, H.Y. Huang, C.-H. Wu, A. Chin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	International Conference on Solid State Device and materials (SSDM’09)
Place of Publication	Sendai, Japan
Publication status	Published - 2009 Oct 7

Cite this

@inproceedings{501fe887ee9547e09e8bfc333317101b,

title = "High Performance ZnO Thin-Film Transistors using High-k TiHfO Gate Dielectrics",

author = "Shui-Jinn Wang and Su, {N. C.} and Huang, {C. C} and Chen, {Y. H.} and Chiang, {C. K} and H.Y. Huang and C.-H. Wu and A. Chin",

year = "2009",

month = oct,

day = "7",

language = "English",

booktitle = "International Conference on Solid State Device and materials (SSDM{\textquoteright}09)",

}

TY - GEN

T1 - High Performance ZnO Thin-Film Transistors using High-k TiHfO Gate Dielectrics

AU - Wang, Shui-Jinn

AU - Su, N. C.

AU - Huang, C. C

AU - Chen, Y. H.

AU - Chiang, C. K

AU - Huang, H.Y.

AU - Wu, C.-H.

AU - Chin, A.

PY - 2009/10/7

Y1 - 2009/10/7

M3 - Conference contribution

BT - International Conference on Solid State Device and materials (SSDM’09)

CY - Sendai, Japan

ER -