High-performance ZnO thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method

Po Yu Yang, Jyh Liang Wang, Wei Chih Tsai, Yu Cheng Chang, Shui-Jinn Wang, I. Che Lee, Chao Lung Wang, Yun Shan Chien, Huang Chung Cheng

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this paper, high-performance bottom-gate (BG) thin-?lm transistors (TFTs) with zinc oxide (ZnO) arti?cially location-controlled lateral grain growth have been prepared via low-temperature hydrothermal method. For the proper design of source/drain structure of ZnO/Ti/Pt thin ?lms, the grains can be laterally grown from the under-cut ZnO beneath the Ti/Pt layer. Consequently, the single one vertical grain boundary perpendicular to the current ?ow will be produced in the channel region as the grown grains from the source/drain both sides are impinged. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 μm/10 μm) demonstrated the higher ?eld-effect mobility of 6.09 cm 2/V ̇ s, lower threshold voltage of 3.67 V, higher on/off current ratio above 10 6, and superior current drivability, re?ecting the high-quality ZnO thin ?lms with less grain boundary effect in the channel region.

Original languageEnglish
Pages (from-to)5783-5787
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number7
DOIs
Publication statusPublished - 2012 Jul 1

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Zinc Oxide
Temperature
Growth

All Science Journal Classification (ASJC) codes

  • Medicine(all)

Cite this

Yang, Po Yu ; Wang, Jyh Liang ; Tsai, Wei Chih ; Chang, Yu Cheng ; Wang, Shui-Jinn ; Lee, I. Che ; Wang, Chao Lung ; Chien, Yun Shan ; Cheng, Huang Chung. / High-performance ZnO thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method. In: Journal of Nanoscience and Nanotechnology. 2012 ; Vol. 12, No. 7. pp. 5783-5787.
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abstract = "In this paper, high-performance bottom-gate (BG) thin-?lm transistors (TFTs) with zinc oxide (ZnO) arti?cially location-controlled lateral grain growth have been prepared via low-temperature hydrothermal method. For the proper design of source/drain structure of ZnO/Ti/Pt thin ?lms, the grains can be laterally grown from the under-cut ZnO beneath the Ti/Pt layer. Consequently, the single one vertical grain boundary perpendicular to the current ?ow will be produced in the channel region as the grown grains from the source/drain both sides are impinged. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 μm/10 μm) demonstrated the higher ?eld-effect mobility of 6.09 cm 2/V ̇ s, lower threshold voltage of 3.67 V, higher on/off current ratio above 10 6, and superior current drivability, re?ecting the high-quality ZnO thin ?lms with less grain boundary effect in the channel region.",
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High-performance ZnO thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method. / Yang, Po Yu; Wang, Jyh Liang; Tsai, Wei Chih; Chang, Yu Cheng; Wang, Shui-Jinn; Lee, I. Che; Wang, Chao Lung; Chien, Yun Shan; Cheng, Huang Chung.

In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 7, 01.07.2012, p. 5783-5787.

Research output: Contribution to journalArticle

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AU - Lee, I. Che

AU - Wang, Chao Lung

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AU - Cheng, Huang Chung

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