High performances and reliability of novel GaAs MSM photodetectors with InGaP buffer and capping layers

Chang Da Tsai, Hung Pin Shiao, Ching Ting Lee, Yuan Kuang Tu

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

To avoid the trap-induced, low-frequency internal gain and improve the reliability for thermal storage test, a novel structure of GaAs metal-semiconductor-metal photodetector with InGaP buffer and capping layers is investigated. The dark current density of the photodetectors is about 7 μA/cm2. Its responsivity at 0.83-μm wavelength is about 0.48 A/W. After thermal storage at 150°C for 10 h, no performance degradation was found in the novel photodetectors.

Original languageEnglish
Pages (from-to)660-662
Number of pages3
JournalIEEE Photonics Technology Letters
Volume9
Issue number5
DOIs
Publication statusPublished - 1997 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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