High performances and reliability of novel GaAs MSM photodetectors with InGaP buffer and capping layers

Chang Da Tsai, Hung Pin Shiao, Ching-Ting Lee, Yuan Kuang Tu

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

To avoid the trap-induced, low-frequency internal gain and improve the reliability for thermal storage test, a novel structure of GaAs metal-semiconductor-metal photodetector with InGaP buffer and capping layers is investigated. The dark current density of the photodetectors is about 7 μA/cm2. Its responsivity at 0.83-μm wavelength is about 0.48 A/W. After thermal storage at 150°C for 10 h, no performance degradation was found in the novel photodetectors.

Original languageEnglish
Pages (from-to)660-662
Number of pages3
JournalIEEE Photonics Technology Letters
Volume9
Issue number5
DOIs
Publication statusPublished - 1997 May 1

Fingerprint

MSM (semiconductors)
Photodetectors
photometers
Buffers
buffers
Metals
Dark currents
dark current
metals
Current density
traps
Semiconductor materials
current density
degradation
low frequencies
Degradation
Wavelength
wavelengths
gallium arsenide
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

Tsai, Chang Da ; Shiao, Hung Pin ; Lee, Ching-Ting ; Tu, Yuan Kuang. / High performances and reliability of novel GaAs MSM photodetectors with InGaP buffer and capping layers. In: IEEE Photonics Technology Letters. 1997 ; Vol. 9, No. 5. pp. 660-662.
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High performances and reliability of novel GaAs MSM photodetectors with InGaP buffer and capping layers. / Tsai, Chang Da; Shiao, Hung Pin; Lee, Ching-Ting; Tu, Yuan Kuang.

In: IEEE Photonics Technology Letters, Vol. 9, No. 5, 01.05.1997, p. 660-662.

Research output: Contribution to journalArticle

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