Abstract
We present the high performance of InGaP/GaAs metal-semiconductor-metal photodetectors (MSM-PDs) using copper as the interdigital Schottky electrodes. The devices exhibit ultra-low dark current (70 pA at bias of 10 V) and ultra-fast pulse response (over 9 GHz). The notable dark current characteristic and the absence of trap-induced gain are accredited to the superior properties of InGaP capping layer. The superior performances of InGaP/GaAs MSM-PDs make it promising for data communication.
| Original language | English |
|---|---|
| Pages (from-to) | 724-731 |
| Number of pages | 8 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 4078 |
| Publication status | Published - 2000 |
| Event | Optoelectronic Materials and Devices II - Taipei, Taiwan Duration: 2000 Jul 26 → 2000 Jul 28 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering