High power and high breakdown δ-doped In0.35Al 0.65As/In0.35Ga0.65As metamorphic HEMT

Shu Jenn Yu, Wei Chou Hsu, Yeong Jia Chen, Chang Luen Wu

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


δ-Doped In0.35Al0.65As/In0.35Ga 0.65As metamorphic high electron mobility transistor (MHEMT) grown by molecular beam epitaxy (MBE) has been successfully investigated. High power characteristic are achieved due to the improved impact ionization and kink effects within the channel by bandgap engineering. This work demonstrates distinguished device characteristics, including superior breakdown performance (BVGD = -15.2 V and BVoff = 14.1 V), high small-signal gain (Gs = 22.7 dB), high microwave output power (Pout = 14.1 dB m at 2.4 GHz), and low minimum noise figure (NFmin = 1.1 dB). In addition, complete parametric information of the small-signal device model has also been extracted and discussed for the studied metamorphic HEMT.

Original languageEnglish
Pages (from-to)291-296
Number of pages6
JournalSolid-State Electronics
Issue number2
Publication statusPublished - 2006 Feb

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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