High-power-density and high-gain δ-doped In0.425Al 0.575As/In0.425Ga0.575As low-voltage for operation

Jun Chin Huang, Wei Chou Hsu, Ching Sung Lee, Dong Hai Huang, Yuan Cheng Yang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A δ -doped In0.425 Al0.575 As In0.425 Ga0.575 AsGaAs metamorphic high electron mobility transistor with an In0.425 Ga0.575 As channel to effectively relieve the impact-ionization effects has been successfully fabricated by the molecular beam epitaxy system. With the designs of an In0.425 Ga0.575 As channel layer and a wide-bangap In0.425 Al0.575 As Schottky-contact layer, good carrier confinement, improved breakdown, low output conductance, and high voltage gain with good linearity have been simultaneously achieved. We have also comprehensively investigated the microwave and power performances as a function of VGS and VDS, respectively. Experimentally, the unity-gain cutoff frequency (ft) and the maximum oscillation frequency (fmax) slightly decrease with VDS of above 2 V. However, the power gain and the output power increase as VDS increases from 1 to 5 V. Furthermore, the proposed device has also demonstrated good intermodulation distortion characteristics at lower biases, indicating its promise for the large-scale and low-voltage millimeter-wave integrated circuit applications.

Original languageEnglish
Pages (from-to)H185-H190
JournalJournal of the Electrochemical Society
Volume154
Issue number3
DOIs
Publication statusPublished - 2007 Feb 19

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'High-power-density and high-gain δ-doped In<sub>0.425</sub>Al <sub>0.575</sub>As/In<sub>0.425</sub>Ga<sub>0.575</sub>As low-voltage for operation'. Together they form a unique fingerprint.

  • Cite this