High power nitride based light emitting diodes with Ni/ITO p-type contacts

Y. C. Lin; S. J. Chang; Y. K. Su; C. S. Chang; S. C. Shei; J. C. Ke; H. M. Lo; S. C. Chen; C. W. Kuo

doi:10.1016/S0038-1101(03)00108-4

High power nitride based light emitting diodes with Ni/ITO p-type contacts

Y. C. Lin
, S. J. Chang
, Y. K. Su
, C. S. Chang
, S. C. Shei
, J. C. Ke
, H. M. Lo
, S. C. Chen
, C. W. Kuo

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Large size (i.e. 1 mm × 1 mm) high power nitride-based light emitting diodes (LEDs) with Ni/Au and Ni/indium tin oxide (ITO) p-contacts were fabricated. It was found that the 200 mA forward voltage was 3.19 and 3.3 V for the power LEDs with Ni/Au and Ni/ITO p-contacts, respectively. On the other hand, although the 200 mA output power was only 11.59 mW for the power LED with Ni/Au p-contact, the 200 mA output power could reach 16.52 mW for the power LED with Ni/ITO p-contact. Such a significant increase could be attributed to the more transparent nature of Ni/ITO, as compared to Ni/Au. Preliminary life test also indicates that power LEDs with Ni/ITO p-contact are at least as reliable as power LEDs with Ni/Au p-contact.

Original language	English
Pages (from-to)	1565-1568
Number of pages	4
Journal	Solid-State Electronics
Volume	47
Issue number	9
DOIs	https://doi.org/10.1016/S0038-1101(03)00108-4
Publication status	Published - 2003 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(03)00108-4

Cite this

@article{8383bbab957647ebb4e4a217e2f02619,

title = "High power nitride based light emitting diodes with Ni/ITO p-type contacts",

abstract = "Large size (i.e. 1 mm × 1 mm) high power nitride-based light emitting diodes (LEDs) with Ni/Au and Ni/indium tin oxide (ITO) p-contacts were fabricated. It was found that the 200 mA forward voltage was 3.19 and 3.3 V for the power LEDs with Ni/Au and Ni/ITO p-contacts, respectively. On the other hand, although the 200 mA output power was only 11.59 mW for the power LED with Ni/Au p-contact, the 200 mA output power could reach 16.52 mW for the power LED with Ni/ITO p-contact. Such a significant increase could be attributed to the more transparent nature of Ni/ITO, as compared to Ni/Au. Preliminary life test also indicates that power LEDs with Ni/ITO p-contact are at least as reliable as power LEDs with Ni/Au p-contact.",

author = "Lin, \{Y. C.\} and Chang, \{S. J.\} and Su, \{Y. K.\} and Chang, \{C. S.\} and Shei, \{S. C.\} and Ke, \{J. C.\} and Lo, \{H. M.\} and Chen, \{S. C.\} and Kuo, \{C. W.\}",

note = "Funding Information: This work was supported by National Science Council under contract number NSC-89-2215-E-006-095.",

year = "2003",

month = sep,

doi = "10.1016/S0038-1101(03)00108-4",

language = "English",

volume = "47",

pages = "1565--1568",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "9",

}

TY - JOUR

T1 - High power nitride based light emitting diodes with Ni/ITO p-type contacts

AU - Lin, Y. C.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chang, C. S.

AU - Shei, S. C.

AU - Ke, J. C.

AU - Lo, H. M.

AU - Chen, S. C.

AU - Kuo, C. W.

N1 - Funding Information: This work was supported by National Science Council under contract number NSC-89-2215-E-006-095.

PY - 2003/9

Y1 - 2003/9

N2 - Large size (i.e. 1 mm × 1 mm) high power nitride-based light emitting diodes (LEDs) with Ni/Au and Ni/indium tin oxide (ITO) p-contacts were fabricated. It was found that the 200 mA forward voltage was 3.19 and 3.3 V for the power LEDs with Ni/Au and Ni/ITO p-contacts, respectively. On the other hand, although the 200 mA output power was only 11.59 mW for the power LED with Ni/Au p-contact, the 200 mA output power could reach 16.52 mW for the power LED with Ni/ITO p-contact. Such a significant increase could be attributed to the more transparent nature of Ni/ITO, as compared to Ni/Au. Preliminary life test also indicates that power LEDs with Ni/ITO p-contact are at least as reliable as power LEDs with Ni/Au p-contact.

AB - Large size (i.e. 1 mm × 1 mm) high power nitride-based light emitting diodes (LEDs) with Ni/Au and Ni/indium tin oxide (ITO) p-contacts were fabricated. It was found that the 200 mA forward voltage was 3.19 and 3.3 V for the power LEDs with Ni/Au and Ni/ITO p-contacts, respectively. On the other hand, although the 200 mA output power was only 11.59 mW for the power LED with Ni/Au p-contact, the 200 mA output power could reach 16.52 mW for the power LED with Ni/ITO p-contact. Such a significant increase could be attributed to the more transparent nature of Ni/ITO, as compared to Ni/Au. Preliminary life test also indicates that power LEDs with Ni/ITO p-contact are at least as reliable as power LEDs with Ni/Au p-contact.

UR - https://www.scopus.com/pages/publications/0038717042

UR - https://www.scopus.com/pages/publications/0038717042#tab=citedBy

U2 - 10.1016/S0038-1101(03)00108-4

DO - 10.1016/S0038-1101(03)00108-4

M3 - Article

AN - SCOPUS:0038717042

SN - 0038-1101

VL - 47

SP - 1565

EP - 1568

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

High power nitride based light emitting diodes with Ni/ITO p-type contacts

Abstract

All Science Journal Classification (ASJC) codes

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