High power silicon schottky barrier diodes with different edge termination structures

Bor Wen Liou, Tron Min Chen, Chih Wei Chen, Kai Ming Uang, Shui Jinn Wang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this work, the design and fabrication of Au/n-Si Schottky barrier diodes (SBDs) with various edge termination schemes including a reduce surface field (RESURF) type lateral super-junction (LSJ), polysilicon (poly-Si) floating, and guard rings are presented. A novel method using ion implantation through a poly-Si film for guard ring fabrication is proposed to prevent damage to the silicon surface. Experimental results show that the reverse leakage current of the proposed SBDs is reduced by about two orders and the breakdown voltage is increased by more than 4-fold those of conventional SBDs.

Original languageEnglish
Pages (from-to)L1244-L1247
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number37-41
DOIs
Publication statusPublished - 2005 Sep 30

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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