In this work, the design and fabrication of Au/n-Si Schottky barrier diodes (SBDs) with various edge termination schemes including a reduce surface field (RESURF) type lateral super-junction (LSJ), polysilicon (poly-Si) floating, and guard rings are presented. A novel method using ion implantation through a poly-Si film for guard ring fabrication is proposed to prevent damage to the silicon surface. Experimental results show that the reverse leakage current of the proposed SBDs is reduced by about two orders and the breakdown voltage is increased by more than 4-fold those of conventional SBDs.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - 2005 Sep 30|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)