High power wideband AlGaN/GaN HEMT feedback amplifier module with drain and feedback loop inductances

Y. Chung; S. Cai; W. Lee; Y. Lin; C. P. Wen; K. L. Wang; T. Itoh

doi:10.1049/el:20010787

High power wideband AlGaN/GaN HEMT feedback amplifier module with drain and feedback loop inductances

Y. Chung
, S. Cai
, W. Lee
, Y. Lin
, C. P. Wen
, K. L. Wang
, T. Itoh

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

A high power wideband feedback amplifier module using AlGaN/ GaN high electron mobility transistor has been developed that covers the frequency range of DC to 5 GHz with small signal gain of 9dB. Shunt feedback topology is introduced by adding inductances to increase the bandwidth. At mid-band frequency, power added efficiency of 20% and a saturation power level of 29.5 dBm were obtained at a drain voltage of 12V (V_ds) and a gate voltage of -3 V (V_gs).

Original language	English
Pages (from-to)	1199-1200
Number of pages	2
Journal	Electronics Letters
Volume	37
Issue number	19
DOIs	https://doi.org/10.1049/el:20010787
Publication status	Published - 2001 Sept 13

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20010787

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abstract = "A high power wideband feedback amplifier module using AlGaN/ GaN high electron mobility transistor has been developed that covers the frequency range of DC to 5 GHz with small signal gain of 9dB. Shunt feedback topology is introduced by adding inductances to increase the bandwidth. At mid-band frequency, power added efficiency of 20\% and a saturation power level of 29.5 dBm were obtained at a drain voltage of 12V (Vds) and a gate voltage of -3 V (Vgs).",

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T1 - High power wideband AlGaN/GaN HEMT feedback amplifier module with drain and feedback loop inductances

AU - Chung, Y.

AU - Cai, S.

AU - Lee, W.

AU - Lin, Y.

AU - Wen, C. P.

AU - Wang, K. L.

AU - Itoh, T.

PY - 2001/9/13

Y1 - 2001/9/13

N2 - A high power wideband feedback amplifier module using AlGaN/ GaN high electron mobility transistor has been developed that covers the frequency range of DC to 5 GHz with small signal gain of 9dB. Shunt feedback topology is introduced by adding inductances to increase the bandwidth. At mid-band frequency, power added efficiency of 20% and a saturation power level of 29.5 dBm were obtained at a drain voltage of 12V (Vds) and a gate voltage of -3 V (Vgs).

AB - A high power wideband feedback amplifier module using AlGaN/ GaN high electron mobility transistor has been developed that covers the frequency range of DC to 5 GHz with small signal gain of 9dB. Shunt feedback topology is introduced by adding inductances to increase the bandwidth. At mid-band frequency, power added efficiency of 20% and a saturation power level of 29.5 dBm were obtained at a drain voltage of 12V (Vds) and a gate voltage of -3 V (Vgs).

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UR - https://www.scopus.com/pages/publications/0035855799#tab=citedBy

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DO - 10.1049/el:20010787

M3 - Article

AN - SCOPUS:0035855799

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SP - 1199

EP - 1200

JO - Electronics Letters

JF - Electronics Letters

IS - 19

ER -

High power wideband AlGaN/GaN HEMT feedback amplifier module with drain and feedback loop inductances

Abstract

All Science Journal Classification (ASJC) codes

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