High pressure induced shifts in the superconducting transition temperature of sputtered films

C. W. Chu; L. R. Testardi; P. H. Schmidt

doi:10.1016/0038-1098(77)90965-6

High pressure induced shifts in the superconducting transition temperature of sputtered films

C. W. Chu, L. R. Testardi, P. H. Schmidt

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Research output: Contribution to journal › Article › peer-review

Abstract

Both negative and positive shifts in the superconducting transition temperature with negligibly small changes in the resistance ratio were observed in the NbGe and V₃Si films, respectively, under pressure up to ∼ 22 kbar. The results are discussed along with the roles of defects recently proposed in these materials.

Original language	English
Pages (from-to)	841-844
Number of pages	4
Journal	Solid State Communications
Volume	23
Issue number	11
DOIs	https://doi.org/10.1016/0038-1098(77)90965-6
Publication status	Published - 1977 Sep

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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title = "High pressure induced shifts in the superconducting transition temperature of sputtered films",

abstract = "Both negative and positive shifts in the superconducting transition temperature with negligibly small changes in the resistance ratio were observed in the NbGe and V3Si films, respectively, under pressure up to ∼ 22 kbar. The results are discussed along with the roles of defects recently proposed in these materials.",

author = "Chu, {C. W.} and Testardi, {L. R.} and Schmidt, {P. H.}",

year = "1977",

month = sep,

doi = "10.1016/0038-1098(77)90965-6",

language = "English",

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journal = "Solid State Communications",

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AU - Testardi, L. R.

AU - Schmidt, P. H.

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N2 - Both negative and positive shifts in the superconducting transition temperature with negligibly small changes in the resistance ratio were observed in the NbGe and V3Si films, respectively, under pressure up to ∼ 22 kbar. The results are discussed along with the roles of defects recently proposed in these materials.

AB - Both negative and positive shifts in the superconducting transition temperature with negligibly small changes in the resistance ratio were observed in the NbGe and V3Si films, respectively, under pressure up to ∼ 22 kbar. The results are discussed along with the roles of defects recently proposed in these materials.

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