Abstract
Both negative and positive shifts in the superconducting transition temperature with negligibly small changes in the resistance ratio were observed in the NbGe and V3Si films, respectively, under pressure up to ∼ 22 kbar. The results are discussed along with the roles of defects recently proposed in these materials.
Original language | English |
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Pages (from-to) | 841-844 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 23 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1977 Sep |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry