High pressure induced shifts in the superconducting transition temperature of sputtered films

C. W. Chu, L. R. Testardi, P. H. Schmidt

Research output: Contribution to journalArticlepeer-review

Abstract

Both negative and positive shifts in the superconducting transition temperature with negligibly small changes in the resistance ratio were observed in the NbGe and V3Si films, respectively, under pressure up to ∼ 22 kbar. The results are discussed along with the roles of defects recently proposed in these materials.

Original languageEnglish
Pages (from-to)841-844
Number of pages4
JournalSolid State Communications
Volume23
Issue number11
DOIs
Publication statusPublished - 1977 Sep

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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