High-quality and crack-free AlxGa1-xN (x∼0.2) grown on sapphire by a two-step growth method

Chuan-Feng Shih, M. Y. Keh, Y. N. Wang, N. C. Chen, Chin An Chang, P. H. Chang, K. S. Liu

Research output: Contribution to journalArticle

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Abstract

We report a two-step growth of AlxGa1-xN (x∼0.2) by metal-organic vapor-phase epitaxy without a pretreatment of the substrate. High-quality, crack-free and near GaN-free AlGaN was achieved with a thickness much exceeding the theoretical critical thickness of the growth of AlGaN on GaN. The method was compared with the conventional ones such as AlGaN on AlN nucleation layer and AlGaN on GaN buffer layer. In situ reflectometry monitoring indicated different behaviors of the high temperature grown AlGaN over different underlayers. The double crystal X-ray rocking curve showed a full-width at half-maximum of only 500 arcsec for the 1.7 μm Al 0.2Ga0.8N grown. The Hall measurement showed a low background carrier concentration of 7×1017 cm-3. The electron mobility was 150 cm2 V-1 s-1 for the Al0.2Ga0.8N film doped to 2×1018 cm -3. The surface morphology and crystal quality were systematically examined at different growth stages. The likely mechanism for the strain relaxation and high-quality AlGaN films grown were also suggested.

Original languageEnglish
Pages (from-to)44-50
Number of pages7
JournalJournal of Crystal Growth
Volume277
Issue number1-4
DOIs
Publication statusPublished - 2005 Apr 15

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Aluminum Oxide
Sapphire
sapphire
cracks
Cracks
Strain relaxation
Crystals
Vapor phase epitaxy
Electron mobility
Buffer layers
Full width at half maximum
electron mobility
vapor phase epitaxy
pretreatment
crystals
Surface morphology
Carrier concentration
Nucleation
buffers
nucleation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Shih, Chuan-Feng ; Keh, M. Y. ; Wang, Y. N. ; Chen, N. C. ; Chang, Chin An ; Chang, P. H. ; Liu, K. S. / High-quality and crack-free AlxGa1-xN (x∼0.2) grown on sapphire by a two-step growth method. In: Journal of Crystal Growth. 2005 ; Vol. 277, No. 1-4. pp. 44-50.
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abstract = "We report a two-step growth of AlxGa1-xN (x∼0.2) by metal-organic vapor-phase epitaxy without a pretreatment of the substrate. High-quality, crack-free and near GaN-free AlGaN was achieved with a thickness much exceeding the theoretical critical thickness of the growth of AlGaN on GaN. The method was compared with the conventional ones such as AlGaN on AlN nucleation layer and AlGaN on GaN buffer layer. In situ reflectometry monitoring indicated different behaviors of the high temperature grown AlGaN over different underlayers. The double crystal X-ray rocking curve showed a full-width at half-maximum of only 500 arcsec for the 1.7 μm Al 0.2Ga0.8N grown. The Hall measurement showed a low background carrier concentration of 7×1017 cm-3. The electron mobility was 150 cm2 V-1 s-1 for the Al0.2Ga0.8N film doped to 2×1018 cm -3. The surface morphology and crystal quality were systematically examined at different growth stages. The likely mechanism for the strain relaxation and high-quality AlGaN films grown were also suggested.",
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High-quality and crack-free AlxGa1-xN (x∼0.2) grown on sapphire by a two-step growth method. / Shih, Chuan-Feng; Keh, M. Y.; Wang, Y. N.; Chen, N. C.; Chang, Chin An; Chang, P. H.; Liu, K. S.

In: Journal of Crystal Growth, Vol. 277, No. 1-4, 15.04.2005, p. 44-50.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High-quality and crack-free AlxGa1-xN (x∼0.2) grown on sapphire by a two-step growth method

AU - Shih, Chuan-Feng

AU - Keh, M. Y.

AU - Wang, Y. N.

AU - Chen, N. C.

AU - Chang, Chin An

AU - Chang, P. H.

AU - Liu, K. S.

PY - 2005/4/15

Y1 - 2005/4/15

N2 - We report a two-step growth of AlxGa1-xN (x∼0.2) by metal-organic vapor-phase epitaxy without a pretreatment of the substrate. High-quality, crack-free and near GaN-free AlGaN was achieved with a thickness much exceeding the theoretical critical thickness of the growth of AlGaN on GaN. The method was compared with the conventional ones such as AlGaN on AlN nucleation layer and AlGaN on GaN buffer layer. In situ reflectometry monitoring indicated different behaviors of the high temperature grown AlGaN over different underlayers. The double crystal X-ray rocking curve showed a full-width at half-maximum of only 500 arcsec for the 1.7 μm Al 0.2Ga0.8N grown. The Hall measurement showed a low background carrier concentration of 7×1017 cm-3. The electron mobility was 150 cm2 V-1 s-1 for the Al0.2Ga0.8N film doped to 2×1018 cm -3. The surface morphology and crystal quality were systematically examined at different growth stages. The likely mechanism for the strain relaxation and high-quality AlGaN films grown were also suggested.

AB - We report a two-step growth of AlxGa1-xN (x∼0.2) by metal-organic vapor-phase epitaxy without a pretreatment of the substrate. High-quality, crack-free and near GaN-free AlGaN was achieved with a thickness much exceeding the theoretical critical thickness of the growth of AlGaN on GaN. The method was compared with the conventional ones such as AlGaN on AlN nucleation layer and AlGaN on GaN buffer layer. In situ reflectometry monitoring indicated different behaviors of the high temperature grown AlGaN over different underlayers. The double crystal X-ray rocking curve showed a full-width at half-maximum of only 500 arcsec for the 1.7 μm Al 0.2Ga0.8N grown. The Hall measurement showed a low background carrier concentration of 7×1017 cm-3. The electron mobility was 150 cm2 V-1 s-1 for the Al0.2Ga0.8N film doped to 2×1018 cm -3. The surface morphology and crystal quality were systematically examined at different growth stages. The likely mechanism for the strain relaxation and high-quality AlGaN films grown were also suggested.

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