Abstract
We report a two-step growth of AlxGa1-xN (x∼0.2) by metal-organic vapor-phase epitaxy without a pretreatment of the substrate. High-quality, crack-free and near GaN-free AlGaN was achieved with a thickness much exceeding the theoretical critical thickness of the growth of AlGaN on GaN. The method was compared with the conventional ones such as AlGaN on AlN nucleation layer and AlGaN on GaN buffer layer. In situ reflectometry monitoring indicated different behaviors of the high temperature grown AlGaN over different underlayers. The double crystal X-ray rocking curve showed a full-width at half-maximum of only 500 arcsec for the 1.7 μm Al 0.2Ga0.8N grown. The Hall measurement showed a low background carrier concentration of 7×1017 cm-3. The electron mobility was 150 cm2 V-1 s-1 for the Al0.2Ga0.8N film doped to 2×1018 cm -3. The surface morphology and crystal quality were systematically examined at different growth stages. The likely mechanism for the strain relaxation and high-quality AlGaN films grown were also suggested.
| Original language | English |
|---|---|
| Pages (from-to) | 44-50 |
| Number of pages | 7 |
| Journal | Journal of Crystal Growth |
| Volume | 277 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 2005 Apr 15 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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High-quality and crack-free AlxGa1-xN (x∼0.2) grown on sapphire by a two-step growth method. / Shih, Chuan-Feng; Keh, M. Y.; Wang, Y. N.; Chen, N. C.; Chang, Chin An; Chang, P. H.; Liu, K. S.
In: Journal of Crystal Growth, Vol. 277, No. 1-4, 15.04.2005, p. 44-50.Research output: Contribution to journal › Article
TY - JOUR
T1 - High-quality and crack-free AlxGa1-xN (x∼0.2) grown on sapphire by a two-step growth method
AU - Shih, Chuan-Feng
AU - Keh, M. Y.
AU - Wang, Y. N.
AU - Chen, N. C.
AU - Chang, Chin An
AU - Chang, P. H.
AU - Liu, K. S.
PY - 2005/4/15
Y1 - 2005/4/15
N2 - We report a two-step growth of AlxGa1-xN (x∼0.2) by metal-organic vapor-phase epitaxy without a pretreatment of the substrate. High-quality, crack-free and near GaN-free AlGaN was achieved with a thickness much exceeding the theoretical critical thickness of the growth of AlGaN on GaN. The method was compared with the conventional ones such as AlGaN on AlN nucleation layer and AlGaN on GaN buffer layer. In situ reflectometry monitoring indicated different behaviors of the high temperature grown AlGaN over different underlayers. The double crystal X-ray rocking curve showed a full-width at half-maximum of only 500 arcsec for the 1.7 μm Al 0.2Ga0.8N grown. The Hall measurement showed a low background carrier concentration of 7×1017 cm-3. The electron mobility was 150 cm2 V-1 s-1 for the Al0.2Ga0.8N film doped to 2×1018 cm -3. The surface morphology and crystal quality were systematically examined at different growth stages. The likely mechanism for the strain relaxation and high-quality AlGaN films grown were also suggested.
AB - We report a two-step growth of AlxGa1-xN (x∼0.2) by metal-organic vapor-phase epitaxy without a pretreatment of the substrate. High-quality, crack-free and near GaN-free AlGaN was achieved with a thickness much exceeding the theoretical critical thickness of the growth of AlGaN on GaN. The method was compared with the conventional ones such as AlGaN on AlN nucleation layer and AlGaN on GaN buffer layer. In situ reflectometry monitoring indicated different behaviors of the high temperature grown AlGaN over different underlayers. The double crystal X-ray rocking curve showed a full-width at half-maximum of only 500 arcsec for the 1.7 μm Al 0.2Ga0.8N grown. The Hall measurement showed a low background carrier concentration of 7×1017 cm-3. The electron mobility was 150 cm2 V-1 s-1 for the Al0.2Ga0.8N film doped to 2×1018 cm -3. The surface morphology and crystal quality were systematically examined at different growth stages. The likely mechanism for the strain relaxation and high-quality AlGaN films grown were also suggested.
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U2 - 10.1016/j.jcrysgro.2005.01.015
DO - 10.1016/j.jcrysgro.2005.01.015
M3 - Article
VL - 277
SP - 44
EP - 50
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -