High-quality Bi2Te3 thin films grown on mica substrates for potential optoelectronic applications

K. Wang; Yanwen Liu; Weiyi Wang; N. Meyer; L. H. Bao; L. He; M. R. Lang; Z. G. Chen; X. Y. Che; K. Post; J. Zou; D. N. Basov; K. L. Wang; Faxian Xiu

doi:10.1063/1.4813903

High-quality Bi₂Te₃ thin films grown on mica substrates for potential optoelectronic applications

K. Wang, Yanwen Liu, Weiyi Wang, N. Meyer, L. H. Bao, L. He, M. R. Lang, Z. G. Chen, X. Y. Che, K. Post, J. Zou, D. N. Basov, K. L. Wang, Faxian Xiu

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

We report high-quality topological insulator Bi₂Te₃ thin films grown on muscovite mica substrates by molecular beam epitaxy. The topographic and structural analysis revealed that the Bi₂Te ₃ thin films exhibited atomically smooth terraces over a large area and a high crystalline quality. Both weak antilocalization effect and quantum oscillations were observed in the magnetotransport of the relatively thin samples. A phase coherence length of 277 nm for a 6 nm thin film and a high surface mobility of 0.58 m² V^-1 s^-1 for a 4 nm thin film were achieved. These results confirm that the thin films grown on mica are of high quality.

Original language	English
Article number	031605
Journal	Applied Physics Letters
Volume	103
Issue number	3
DOIs	https://doi.org/10.1063/1.4813903
Publication status	Published - 2013 Jul 15

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4813903

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@article{baa996dffa3d436fa606c356d509329d,

title = "High-quality Bi2Te3 thin films grown on mica substrates for potential optoelectronic applications",

abstract = "We report high-quality topological insulator Bi2Te3 thin films grown on muscovite mica substrates by molecular beam epitaxy. The topographic and structural analysis revealed that the Bi2Te 3 thin films exhibited atomically smooth terraces over a large area and a high crystalline quality. Both weak antilocalization effect and quantum oscillations were observed in the magnetotransport of the relatively thin samples. A phase coherence length of 277 nm for a 6 nm thin film and a high surface mobility of 0.58 m2 V-1 s-1 for a 4 nm thin film were achieved. These results confirm that the thin films grown on mica are of high quality.",

author = "K. Wang and Yanwen Liu and Weiyi Wang and N. Meyer and Bao, {L. H.} and L. He and Lang, {M. R.} and Chen, {Z. G.} and Che, {X. Y.} and K. Post and J. Zou and Basov, {D. N.} and Wang, {K. L.} and Faxian Xiu",

note = "Funding Information: This work was supported by the National Young 1000 Talents Plan in China. N. Meyer and X. Y. Che would like to thank the financial support from the U.S. National Science Foundation under the Award No. 1201883.",

year = "2013",

month = jul,

day = "15",

doi = "10.1063/1.4813903",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "3",

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TY - JOUR

T1 - High-quality Bi2Te3 thin films grown on mica substrates for potential optoelectronic applications

AU - Wang, K.

AU - Liu, Yanwen

AU - Wang, Weiyi

AU - Meyer, N.

AU - Bao, L. H.

AU - He, L.

AU - Lang, M. R.

AU - Chen, Z. G.

AU - Che, X. Y.

AU - Post, K.

AU - Zou, J.

AU - Basov, D. N.

AU - Wang, K. L.

AU - Xiu, Faxian

N1 - Funding Information: This work was supported by the National Young 1000 Talents Plan in China. N. Meyer and X. Y. Che would like to thank the financial support from the U.S. National Science Foundation under the Award No. 1201883.

PY - 2013/7/15

Y1 - 2013/7/15

N2 - We report high-quality topological insulator Bi2Te3 thin films grown on muscovite mica substrates by molecular beam epitaxy. The topographic and structural analysis revealed that the Bi2Te 3 thin films exhibited atomically smooth terraces over a large area and a high crystalline quality. Both weak antilocalization effect and quantum oscillations were observed in the magnetotransport of the relatively thin samples. A phase coherence length of 277 nm for a 6 nm thin film and a high surface mobility of 0.58 m2 V-1 s-1 for a 4 nm thin film were achieved. These results confirm that the thin films grown on mica are of high quality.

AB - We report high-quality topological insulator Bi2Te3 thin films grown on muscovite mica substrates by molecular beam epitaxy. The topographic and structural analysis revealed that the Bi2Te 3 thin films exhibited atomically smooth terraces over a large area and a high crystalline quality. Both weak antilocalization effect and quantum oscillations were observed in the magnetotransport of the relatively thin samples. A phase coherence length of 277 nm for a 6 nm thin film and a high surface mobility of 0.58 m2 V-1 s-1 for a 4 nm thin film were achieved. These results confirm that the thin films grown on mica are of high quality.

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U2 - 10.1063/1.4813903

DO - 10.1063/1.4813903

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VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 031605

ER -

High-quality Bi₂Te₃ thin films grown on mica substrates for potential optoelectronic applications

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