High-quality Bi2Te3 thin films grown on mica substrates for potential optoelectronic applications

K. Wang, Yanwen Liu, Weiyi Wang, N. Meyer, L. H. Bao, L. He, M. R. Lang, Z. G. Chen, X. Y. Che, K. Post, J. Zou, D. N. Basov, K. L. Wang, Faxian Xiu

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54 Citations (Scopus)

Abstract

We report high-quality topological insulator Bi2Te3 thin films grown on muscovite mica substrates by molecular beam epitaxy. The topographic and structural analysis revealed that the Bi2Te 3 thin films exhibited atomically smooth terraces over a large area and a high crystalline quality. Both weak antilocalization effect and quantum oscillations were observed in the magnetotransport of the relatively thin samples. A phase coherence length of 277 nm for a 6 nm thin film and a high surface mobility of 0.58 m2 V-1 s-1 for a 4 nm thin film were achieved. These results confirm that the thin films grown on mica are of high quality.

Original languageEnglish
Article number031605
JournalApplied Physics Letters
Volume103
Issue number3
DOIs
Publication statusPublished - 2013 Jul 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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