High quality GaN epitaxial layers grown by modulated beam growth method

K. T. Liu; T. Tezuka; S. Sugita; Y. Watari; Y. Horikoshi; Y. K. Su; S. J. Chang

doi:10.1016/j.matchemphys.2004.02.027

High quality GaN epitaxial layers grown by modulated beam growth method

K. T. Liu, T. Tezuka, S. Sugita, Y. Watari, Y. Horikoshi, Y. K. Su, S. J. Chang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

High quality GaN epitaxial layers are grown by modulated beam growth method. It is found that we can achieve a smaller X-ray diffraction full-width-half-maximum, a much stronger photoluminescence intensity and a much smaller vertical striations from the GaN epitaxial layers grown under Ga flux modulation method. These observations can all be attributed to the enhanced lateral growth of the modulated beam growth method.

Original language	English
Pages (from-to)	161-164
Number of pages	4
Journal	Materials Chemistry and Physics
Volume	86
Issue number	1
DOIs	https://doi.org/10.1016/j.matchemphys.2004.02.027
Publication status	Published - 2004 Jul 15

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics

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10.1016/j.matchemphys.2004.02.027

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@article{86cba21d3dcf426faa5cb19004ed51a1,

title = "High quality GaN epitaxial layers grown by modulated beam growth method",

abstract = "High quality GaN epitaxial layers are grown by modulated beam growth method. It is found that we can achieve a smaller X-ray diffraction full-width-half-maximum, a much stronger photoluminescence intensity and a much smaller vertical striations from the GaN epitaxial layers grown under Ga flux modulation method. These observations can all be attributed to the enhanced lateral growth of the modulated beam growth method.",

author = "Liu, {K. T.} and T. Tezuka and S. Sugita and Y. Watari and Y. Horikoshi and Su, {Y. K.} and Chang, {S. J.}",

note = "Funding Information: The work was partly supported by the Japan Society for the Promotion of Science “Research for the Future” Program (JSPS-RFTF96P00103), and also COE Program “Molecular Nano-Engineering” from the Ministry of Education, Culture, Sports, Science and Technology, Japan.",

year = "2004",

month = jul,

day = "15",

doi = "10.1016/j.matchemphys.2004.02.027",

language = "English",

volume = "86",

pages = "161--164",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier BV",

number = "1",

}

TY - JOUR

T1 - High quality GaN epitaxial layers grown by modulated beam growth method

AU - Liu, K. T.

AU - Tezuka, T.

AU - Sugita, S.

AU - Watari, Y.

AU - Horikoshi, Y.

AU - Su, Y. K.

AU - Chang, S. J.

N1 - Funding Information: The work was partly supported by the Japan Society for the Promotion of Science “Research for the Future” Program (JSPS-RFTF96P00103), and also COE Program “Molecular Nano-Engineering” from the Ministry of Education, Culture, Sports, Science and Technology, Japan.

PY - 2004/7/15

Y1 - 2004/7/15

N2 - High quality GaN epitaxial layers are grown by modulated beam growth method. It is found that we can achieve a smaller X-ray diffraction full-width-half-maximum, a much stronger photoluminescence intensity and a much smaller vertical striations from the GaN epitaxial layers grown under Ga flux modulation method. These observations can all be attributed to the enhanced lateral growth of the modulated beam growth method.

AB - High quality GaN epitaxial layers are grown by modulated beam growth method. It is found that we can achieve a smaller X-ray diffraction full-width-half-maximum, a much stronger photoluminescence intensity and a much smaller vertical striations from the GaN epitaxial layers grown under Ga flux modulation method. These observations can all be attributed to the enhanced lateral growth of the modulated beam growth method.

UR - http://www.scopus.com/inward/record.url?scp=2442652940&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2442652940&partnerID=8YFLogxK

U2 - 10.1016/j.matchemphys.2004.02.027

DO - 10.1016/j.matchemphys.2004.02.027

M3 - Article

AN - SCOPUS:2442652940

SN - 0254-0584

VL - 86

SP - 161

EP - 164

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 1

ER -

High quality GaN epitaxial layers grown by modulated beam growth method

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