High quality GaN epitaxial layers grown by modulated beam growth method

K. T. Liu, T. Tezuka, S. Sugita, Y. Watari, Y. Horikoshi, Y. K. Su, S. J. Chang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

High quality GaN epitaxial layers are grown by modulated beam growth method. It is found that we can achieve a smaller X-ray diffraction full-width-half-maximum, a much stronger photoluminescence intensity and a much smaller vertical striations from the GaN epitaxial layers grown under Ga flux modulation method. These observations can all be attributed to the enhanced lateral growth of the modulated beam growth method.

Original languageEnglish
Pages (from-to)161-164
Number of pages4
JournalMaterials Chemistry and Physics
Volume86
Issue number1
DOIs
Publication statusPublished - 2004 Jul 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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