High-quality Ge films on Si substrates using Sb surfactant-mediated graded SiGe buffers

Keyphrases

• Si Substrate 100%
• SiGe 100%
• Ge Film 100%
• Surfactant-mediated 100%
• Low Temperature 33%
• Reverse Bias 33%
• High Temperature 33%
• Transmission Electron Microscopy 33%
• Ni-P 33%
• Surface Roughness 33%
• Photodiode 33%
• Surfactant 33%
• Dark Current Density 33%
• Intermediate Temperature 33%
• Graded Layer 33%
• Solid Source Molecular Beam Epitaxy 33%
• PIN Diode 33%
• Threading Dislocation Density 33%
• Low Dark Current 33%
• Graded Buffer Layer 33%
• Low Threading Dislocation Density 33%

Material Science

• Film 100%
• Density 100%
• Surface Active Agent 100%
• Molecular Beam Epitaxy 33%
• Transmission Electron Microscopy 33%
• Surface Roughness 33%