High-quality strain-relaxed SiGe alloy grown on implanted silicon-on-insulator substrate

F. Y. Huang; M. A. Chu; M. O. Tanner; K. L. Wang; G. D. U'Ren; M. S. Goorsky

doi:10.1063/1.126442

High-quality strain-relaxed SiGe alloy grown on implanted silicon-on-insulator substrate

F. Y. Huang, M. A. Chu, M. O. Tanner, K. L. Wang, G. D. U'Ren, M. S. Goorsky

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

We report on the growth and characterization of high-quality strain-relaxed SiGe alloys on a compliant silicon-on-insulator (SOI) substrate. The annealing temperature required for strain transfer has been reduced through boron implantation to the buried oxide, leading to a high quality SiGe alloy free from dislocations as evident from the near-band gap photoluminescence. Nearly complete strain relaxation (∼95%) for SiGe alloy of a thickness beyond the conventional critical thickness has been obtained.

Original language	English
Pages (from-to)	2680-2682
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	19
DOIs	https://doi.org/10.1063/1.126442
Publication status	Published - 2000 May 8

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.126442

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abstract = "We report on the growth and characterization of high-quality strain-relaxed SiGe alloys on a compliant silicon-on-insulator (SOI) substrate. The annealing temperature required for strain transfer has been reduced through boron implantation to the buried oxide, leading to a high quality SiGe alloy free from dislocations as evident from the near-band gap photoluminescence. Nearly complete strain relaxation (∼95%) for SiGe alloy of a thickness beyond the conventional critical thickness has been obtained.",

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AU - Tanner, M. O.

AU - Wang, K. L.

AU - U'Ren, G. D.

AU - Goorsky, M. S.

PY - 2000/5/8

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AB - We report on the growth and characterization of high-quality strain-relaxed SiGe alloys on a compliant silicon-on-insulator (SOI) substrate. The annealing temperature required for strain transfer has been reduced through boron implantation to the buried oxide, leading to a high quality SiGe alloy free from dislocations as evident from the near-band gap photoluminescence. Nearly complete strain relaxation (∼95%) for SiGe alloy of a thickness beyond the conventional critical thickness has been obtained.

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High-quality strain-relaxed SiGe alloy grown on implanted silicon-on-insulator substrate

Abstract

All Science Journal Classification (ASJC) codes

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