High-quality strain-relaxed SiGe films grown with low temperature Si buffer

Y. H. Luo, J. Wan, R. L. Forrest, J. L. Liu, M. S. Goorsky, K. L. Wang

Research output: Contribution to journalArticlepeer-review

51 Citations (Scopus)

Abstract

High-quality strain-relaxed SiGe templates with a low threading dislocation density and smooth surface are critical for device performance. In this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, double-axis x-ray diffraction, photoluminescence spectroscopy, and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that when using proper growth conditions for the low temperature Si buffer the Si buffer became tensily strained and gave rise to the compliant effect. The lattice mismatch between the SiGe and the Si buffer layer was reduced. A 500 nm Si0.7Ge0.3 film with a low threading dislocation density as well as smooth surface was obtained by this method.

Original languageEnglish
Pages (from-to)8279-8283
Number of pages5
JournalJournal of Applied Physics
Volume89
Issue number12
DOIs
Publication statusPublished - 2001 Jun

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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