High Quality ZnO Thin Films on InP Substrates Prepared by Radio Frequency Magnetron Sputtering. I. Material Study

S. J. Chang; Y. K. Su; Y. P. Shei

doi:10.1116/1.579367

High Quality ZnO Thin Films on InP Substrates Prepared by Radio Frequency Magnetron Sputtering. I. Material Study

S. J. Chang, Y. K. Su, Y. P. Shei

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

High quality ZnO thin films were deposited onto InP substrates by radio frequency magnetron sputtering. It was found that the characteristics of ZnO film depend on deposition parameters, and a detailed study was performed. By adjusting these parameters, we obtained a ZnO thin film with an extremely sharp x-ray diffraction peak with a 0.183° full width at half-maximum. The resistivity of the deposited ZnO film is 10¹⁰ Ω cm and its refractive index is close to that of single crystal ZnO. These results indicate that the quality of these ZnO thin films is acceptable for the fabrication of a surface acoustic wave device on InP substrates.

Original language	English
Pages (from-to)	381-384
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	13
Issue number	2
DOIs	https://doi.org/10.1116/1.579367
Publication status	Published - 1995 Mar

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "High quality ZnO thin films were deposited onto InP substrates by radio frequency magnetron sputtering. It was found that the characteristics of ZnO film depend on deposition parameters, and a detailed study was performed. By adjusting these parameters, we obtained a ZnO thin film with an extremely sharp x-ray diffraction peak with a 0.183° full width at half-maximum. The resistivity of the deposited ZnO film is 1010 Ω cm and its refractive index is close to that of single crystal ZnO. These results indicate that the quality of these ZnO thin films is acceptable for the fabrication of a surface acoustic wave device on InP substrates.",

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N2 - High quality ZnO thin films were deposited onto InP substrates by radio frequency magnetron sputtering. It was found that the characteristics of ZnO film depend on deposition parameters, and a detailed study was performed. By adjusting these parameters, we obtained a ZnO thin film with an extremely sharp x-ray diffraction peak with a 0.183° full width at half-maximum. The resistivity of the deposited ZnO film is 1010 Ω cm and its refractive index is close to that of single crystal ZnO. These results indicate that the quality of these ZnO thin films is acceptable for the fabrication of a surface acoustic wave device on InP substrates.

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High Quality ZnO Thin Films on InP Substrates Prepared by Radio Frequency Magnetron Sputtering. I. Material Study

Abstract

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