High-Rate Anisotropic Etching of Silicon by Remote Microwave Plasma in Sulfur-Hexafluoride

Engineering

• Anisotropic 100%
• Microwave Plasma 100%
• Substrate Temperature 100%
• Etch Rate 66%
• Thin Films 33%
• Silicon Wafer 33%
• Ion Implantation 33%
• Light Emission 33%
• Side Wall 33%
• Photoresist 33%
• Crystalline Silicon 33%

Keyphrases

• Sulfur Hexafluoride 100%
• Silicon Etching 66%
• SF6 Plasma 33%
• CuxS 33%
• Etch Profile 33%
• Atomic Fluorine 33%
• Photoresist Mask 33%
• Vertical Etching 33%
• Catalyst Temperature 33%

Material Science

• Silicon 100%
• Anisotropic Etching 100%
• Energy-Dispersive X-Ray Spectroscopy 33%
• Thin Films 33%
• Ion Bombardment 33%
• Emission Spectroscopy 33%
• Silicon Wafer 33%