High reliability in low noise InGaP gated PHEMTs

C. S. Wang; H. K. Huang; Yeong-Her Wang; C. L. Wu; C. S. Chang

High reliability in low noise InGaP gated PHEMTs

C. S. Wang, H. K. Huang, Yeong-Her Wang, C. L. Wu, C. S. Chang

Research output: Contribution to conference › Paper › peer-review

Abstract

This work presents a study on the high reliability of noise characteristics of InGaP low noise PHEMTs, which was demonstrated through DC and thermal stress. The devices that we used were In_0.49Ga_0.51P/In_0.15Ga_0.85 As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm². The DC-stress conditions are 1) V_DS = 6V, V_GS = 0V and 2) I_G = -8 mA (50mA/mm). The ranging of thermal-stress is from 100°C to 250°C. The noise characteristics were measured at 12 GHz and DC bias condition is V_DS = 2 V, I_DS = 10 mA. The key noise-effect parameters of devices are the deep-trap behaviour in device, source/gate resistances, gate to source capacitance and intrinsic transconductance. We showed the very small variation of minimum noise figure, NF_min and associated power gain, G_a after DC and thermal stress by explaining the variation of these key parameters to demonstrate the high reliability in InGaP low noise PHEMTs.

Original language	English
Pages	81-84
Number of pages	4
Publication status	Published - 2002 Jan 1
Event	Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, United States Duration: 2002 Oct 20 → 2002 Oct 23

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Other	Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
Country/Territory	United States
City	Monterey, CA
Period	02-10-20 → 02-10-23

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

@conference{0ca083470c0b4d90ae0d0322e82cdaba,

title = "High reliability in low noise InGaP gated PHEMTs",

abstract = "This work presents a study on the high reliability of noise characteristics of InGaP low noise PHEMTs, which was demonstrated through DC and thermal stress. The devices that we used were In0.49Ga0.51P/In0.15Ga0.85 As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2. The DC-stress conditions are 1) VDS = 6V, VGS = 0V and 2) IG = -8 mA (50mA/mm). The ranging of thermal-stress is from 100°C to 250°C. The noise characteristics were measured at 12 GHz and DC bias condition is VDS = 2 V, IDS = 10 mA. The key noise-effect parameters of devices are the deep-trap behaviour in device, source/gate resistances, gate to source capacitance and intrinsic transconductance. We showed the very small variation of minimum noise figure, NFmin and associated power gain, Ga after DC and thermal stress by explaining the variation of these key parameters to demonstrate the high reliability in InGaP low noise PHEMTs.",

author = "Wang, {C. S.} and Huang, {H. K.} and Yeong-Her Wang and Wu, {C. L.} and Chang, {C. S.}",

year = "2002",

month = jan,

day = "1",

language = "English",

pages = "81--84",

note = "Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) ; Conference date: 20-10-2002 Through 23-10-2002",

}

TY - CONF

T1 - High reliability in low noise InGaP gated PHEMTs

AU - Wang, C. S.

AU - Huang, H. K.

AU - Wang, Yeong-Her

AU - Wu, C. L.

AU - Chang, C. S.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - This work presents a study on the high reliability of noise characteristics of InGaP low noise PHEMTs, which was demonstrated through DC and thermal stress. The devices that we used were In0.49Ga0.51P/In0.15Ga0.85 As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2. The DC-stress conditions are 1) VDS = 6V, VGS = 0V and 2) IG = -8 mA (50mA/mm). The ranging of thermal-stress is from 100°C to 250°C. The noise characteristics were measured at 12 GHz and DC bias condition is VDS = 2 V, IDS = 10 mA. The key noise-effect parameters of devices are the deep-trap behaviour in device, source/gate resistances, gate to source capacitance and intrinsic transconductance. We showed the very small variation of minimum noise figure, NFmin and associated power gain, Ga after DC and thermal stress by explaining the variation of these key parameters to demonstrate the high reliability in InGaP low noise PHEMTs.

AB - This work presents a study on the high reliability of noise characteristics of InGaP low noise PHEMTs, which was demonstrated through DC and thermal stress. The devices that we used were In0.49Ga0.51P/In0.15Ga0.85 As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2. The DC-stress conditions are 1) VDS = 6V, VGS = 0V and 2) IG = -8 mA (50mA/mm). The ranging of thermal-stress is from 100°C to 250°C. The noise characteristics were measured at 12 GHz and DC bias condition is VDS = 2 V, IDS = 10 mA. The key noise-effect parameters of devices are the deep-trap behaviour in device, source/gate resistances, gate to source capacitance and intrinsic transconductance. We showed the very small variation of minimum noise figure, NFmin and associated power gain, Ga after DC and thermal stress by explaining the variation of these key parameters to demonstrate the high reliability in InGaP low noise PHEMTs.

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M3 - Paper

AN - SCOPUS:0036441957

SP - 81

EP - 84

T2 - Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)

Y2 - 20 October 2002 through 23 October 2002

ER -

High reliability in low noise InGaP gated PHEMTs

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