High reliability in low noise InGaP gated PHEMTs

C. S. Wang, H. K. Huang, Yeong-Her Wang, C. L. Wu, C. S. Chang

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

This work presents a study on the high reliability of noise characteristics of InGaP low noise PHEMTs, which was demonstrated through DC and thermal stress. The devices that we used were In0.49Ga0.51P/In0.15Ga0.85 As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2. The DC-stress conditions are 1) VDS = 6V, VGS = 0V and 2) IG = -8 mA (50mA/mm). The ranging of thermal-stress is from 100°C to 250°C. The noise characteristics were measured at 12 GHz and DC bias condition is VDS = 2 V, IDS = 10 mA. The key noise-effect parameters of devices are the deep-trap behaviour in device, source/gate resistances, gate to source capacitance and intrinsic transconductance. We showed the very small variation of minimum noise figure, NFmin and associated power gain, Ga after DC and thermal stress by explaining the variation of these key parameters to demonstrate the high reliability in InGaP low noise PHEMTs.

Original languageEnglish
Pages81-84
Number of pages4
Publication statusPublished - 2002 Jan 1
EventProceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, United States
Duration: 2002 Oct 202002 Oct 23

Other

OtherProceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
CountryUnited States
CityMonterey, CA
Period02-10-2002-10-23

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High electron mobility transistors
Thermal stress
Noise figure
Transconductance
Capacitance

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Wang, C. S., Huang, H. K., Wang, Y-H., Wu, C. L., & Chang, C. S. (2002). High reliability in low noise InGaP gated PHEMTs. 81-84. Paper presented at Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.
Wang, C. S. ; Huang, H. K. ; Wang, Yeong-Her ; Wu, C. L. ; Chang, C. S. / High reliability in low noise InGaP gated PHEMTs. Paper presented at Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.4 p.
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Wang, CS, Huang, HK, Wang, Y-H, Wu, CL & Chang, CS 2002, 'High reliability in low noise InGaP gated PHEMTs' Paper presented at Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States, 02-10-20 - 02-10-23, pp. 81-84.

High reliability in low noise InGaP gated PHEMTs. / Wang, C. S.; Huang, H. K.; Wang, Yeong-Her; Wu, C. L.; Chang, C. S.

2002. 81-84 Paper presented at Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.

Research output: Contribution to conferencePaper

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N2 - This work presents a study on the high reliability of noise characteristics of InGaP low noise PHEMTs, which was demonstrated through DC and thermal stress. The devices that we used were In0.49Ga0.51P/In0.15Ga0.85 As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2. The DC-stress conditions are 1) VDS = 6V, VGS = 0V and 2) IG = -8 mA (50mA/mm). The ranging of thermal-stress is from 100°C to 250°C. The noise characteristics were measured at 12 GHz and DC bias condition is VDS = 2 V, IDS = 10 mA. The key noise-effect parameters of devices are the deep-trap behaviour in device, source/gate resistances, gate to source capacitance and intrinsic transconductance. We showed the very small variation of minimum noise figure, NFmin and associated power gain, Ga after DC and thermal stress by explaining the variation of these key parameters to demonstrate the high reliability in InGaP low noise PHEMTs.

AB - This work presents a study on the high reliability of noise characteristics of InGaP low noise PHEMTs, which was demonstrated through DC and thermal stress. The devices that we used were In0.49Ga0.51P/In0.15Ga0.85 As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2. The DC-stress conditions are 1) VDS = 6V, VGS = 0V and 2) IG = -8 mA (50mA/mm). The ranging of thermal-stress is from 100°C to 250°C. The noise characteristics were measured at 12 GHz and DC bias condition is VDS = 2 V, IDS = 10 mA. The key noise-effect parameters of devices are the deep-trap behaviour in device, source/gate resistances, gate to source capacitance and intrinsic transconductance. We showed the very small variation of minimum noise figure, NFmin and associated power gain, Ga after DC and thermal stress by explaining the variation of these key parameters to demonstrate the high reliability in InGaP low noise PHEMTs.

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Wang CS, Huang HK, Wang Y-H, Wu CL, Chang CS. High reliability in low noise InGaP gated PHEMTs. 2002. Paper presented at Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.