Structural properties of single crystalline CoGa grown by molecular beam epitaxy on a GaAs substrate were investigated using transmission electron microscopy. The results showed that the crystal orientation relationships between the CoGa epilayer and the GaAs substrate were [1 1 0]CoGa | [1 1 0]GaAs and (0 0 1)CoGa | (1 1 0)GaAs and that the CoGa/GaAs heterointerface had abruptness. Modulation of either the Co or the Ga was observed in the CoGa epitaxial layer.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry