High-resolution transmission electron microscopy of the CoGa/GaAs heterostructure grown by molecular beam epitaxy

Y. D. Woo, T. W. Kang, T. W. Kim, J. Y. Lee, T. C. Kuo, K. L. Wang

Research output: Contribution to journalArticlepeer-review

Abstract

Structural properties of single crystalline CoGa grown by molecular beam epitaxy on a GaAs substrate were investigated using transmission electron microscopy. The results showed that the crystal orientation relationships between the CoGa epilayer and the GaAs substrate were [1 1 0]CoGa | [1 1 0]GaAs and (0 0 1)CoGa | (1 1 0)GaAs and that the CoGa/GaAs heterointerface had abruptness. Modulation of either the Co or the Ga was observed in the CoGa epitaxial layer.

Original languageEnglish
Pages (from-to)219-221
Number of pages3
JournalSolid State Communications
Volume91
Issue number3
DOIs
Publication statusPublished - 1994 Jul

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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