High responsivity in GaN ultraviolet photodetector grown on a periodic trapezoid-column patterned sapphire substrate

Kuan Ting Liu, Shoou-Jinn Chang, Sean Wu

Research output: Contribution to journalArticle

Abstract

A GaN ultraviolet (UV) photodetector with a metal-semiconductor-metal structure is grown on a periodic trapezoid-column patterned sapphire substrate by metalorganic chemical vapor deposition. Under 5 V reverse bias, the photodetector fabricated on such a patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a much larger UV-to-visible rejection ratio, and a 476% enhancement in the maximum responsivity than those of the photodetector fabricated on a conventional flat sapphire substrate. These phenomena may all be attributed to the reduction in threading dislocation density and the greater number of photogenerated carriers caused by the improved quality of the GaN film, as well as the reflection and/or scattering of unabsorbed photons on the interface between the GaN film and the periodic trapezoid-column pattern of the substrate.

Original languageEnglish
Pages (from-to)363-370
Number of pages8
JournalSensors and Materials
Volume29
Issue number4
DOIs
Publication statusPublished - 2017 Jan 1

Fingerprint

trapezoids
Aluminum Oxide
Photodetectors
Sapphire
photometers
sapphire
Substrates
Metals
Dark currents
Metallorganic chemical vapor deposition
dark current
Photocurrents
rejection
metals
metalorganic chemical vapor deposition
photocurrents
Photons
Scattering
Semiconductor materials
augmentation

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Materials Science(all)

Cite this

@article{2ec61b44fe3d48268ee56feab0d37d75,
title = "High responsivity in GaN ultraviolet photodetector grown on a periodic trapezoid-column patterned sapphire substrate",
abstract = "A GaN ultraviolet (UV) photodetector with a metal-semiconductor-metal structure is grown on a periodic trapezoid-column patterned sapphire substrate by metalorganic chemical vapor deposition. Under 5 V reverse bias, the photodetector fabricated on such a patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a much larger UV-to-visible rejection ratio, and a 476{\%} enhancement in the maximum responsivity than those of the photodetector fabricated on a conventional flat sapphire substrate. These phenomena may all be attributed to the reduction in threading dislocation density and the greater number of photogenerated carriers caused by the improved quality of the GaN film, as well as the reflection and/or scattering of unabsorbed photons on the interface between the GaN film and the periodic trapezoid-column pattern of the substrate.",
author = "Liu, {Kuan Ting} and Shoou-Jinn Chang and Sean Wu",
year = "2017",
month = "1",
day = "1",
doi = "10.18494/SAM.2017.1517",
language = "English",
volume = "29",
pages = "363--370",
journal = "Sensors and Materials",
issn = "0914-4935",
publisher = "M Y U Scientific Publishing Division",
number = "4",

}

High responsivity in GaN ultraviolet photodetector grown on a periodic trapezoid-column patterned sapphire substrate. / Liu, Kuan Ting; Chang, Shoou-Jinn; Wu, Sean.

In: Sensors and Materials, Vol. 29, No. 4, 01.01.2017, p. 363-370.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High responsivity in GaN ultraviolet photodetector grown on a periodic trapezoid-column patterned sapphire substrate

AU - Liu, Kuan Ting

AU - Chang, Shoou-Jinn

AU - Wu, Sean

PY - 2017/1/1

Y1 - 2017/1/1

N2 - A GaN ultraviolet (UV) photodetector with a metal-semiconductor-metal structure is grown on a periodic trapezoid-column patterned sapphire substrate by metalorganic chemical vapor deposition. Under 5 V reverse bias, the photodetector fabricated on such a patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a much larger UV-to-visible rejection ratio, and a 476% enhancement in the maximum responsivity than those of the photodetector fabricated on a conventional flat sapphire substrate. These phenomena may all be attributed to the reduction in threading dislocation density and the greater number of photogenerated carriers caused by the improved quality of the GaN film, as well as the reflection and/or scattering of unabsorbed photons on the interface between the GaN film and the periodic trapezoid-column pattern of the substrate.

AB - A GaN ultraviolet (UV) photodetector with a metal-semiconductor-metal structure is grown on a periodic trapezoid-column patterned sapphire substrate by metalorganic chemical vapor deposition. Under 5 V reverse bias, the photodetector fabricated on such a patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a much larger UV-to-visible rejection ratio, and a 476% enhancement in the maximum responsivity than those of the photodetector fabricated on a conventional flat sapphire substrate. These phenomena may all be attributed to the reduction in threading dislocation density and the greater number of photogenerated carriers caused by the improved quality of the GaN film, as well as the reflection and/or scattering of unabsorbed photons on the interface between the GaN film and the periodic trapezoid-column pattern of the substrate.

UR - http://www.scopus.com/inward/record.url?scp=85019165695&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85019165695&partnerID=8YFLogxK

U2 - 10.18494/SAM.2017.1517

DO - 10.18494/SAM.2017.1517

M3 - Article

AN - SCOPUS:85019165695

VL - 29

SP - 363

EP - 370

JO - Sensors and Materials

JF - Sensors and Materials

SN - 0914-4935

IS - 4

ER -