High-responsivity InGaAs/InP quantum-well infrared photodetectors prepared by metal organic chemical vapor deposition

Yung Sheng Wang, Shoou Jinn Chang, Shu Ting Chou, Shih Yen Lin, Wei Lin

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1 Citation (Scopus)

Abstract

Ten-period InGaAs/InP quantum-well infrared photodetectors (QWIPs) with and without compressive strain in the quantum-well region prepared by metal organic chemical vapor deposition (MOCVD) are investigated in this study. At a detection wavelength of 8 mm, a high responsivity of 20A/W is observed for the unstrained device, which is attributed to the higher gain of the InP-based material than that of the GaAs-based material. Compared with the unstrained QWIP, the InGaAs/InP QWIP with 1% compressive strain (CS) in the QWs has demonstrated three orders of magnitude dark current depressions so that higher peak detectivity of 2.9 × 1010 cm·Hz1/2/W at 1.3V is observed for the device.

Original languageEnglish
Article number04C108
JournalJapanese journal of applied physics
Volume48
Issue number4 PART 2
DOIs
Publication statusPublished - 2009 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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