High responsivity MgZnO ultraviolet thin-film phototransistor developed using radio frequency sputtering

Jyun Yi Li; Sheng Po Chang; Ming Hung Hsu; Shoou Jinn Chang

doi:10.3390/ma10020126

High responsivity MgZnO ultraviolet thin-film phototransistor developed using radio frequency sputtering

Jyun Yi Li, Sheng Po Chang, Ming Hung Hsu, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on-offcurrent ratio of 10₅, subthreshold swing of 0.8 V/decade, and mobility of 5 cm²/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 10⁵ at a gate bias of -5 V under 290 nm illumination.

Original language	English
Article number	126
Journal	Materials
Volume	10
Issue number	2
DOIs	https://doi.org/10.3390/ma10020126
Publication status	Published - 2017

All Science Journal Classification (ASJC) codes

General Materials Science

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10.3390/ma10020126

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title = "High responsivity MgZnO ultraviolet thin-film phototransistor developed using radio frequency sputtering",

abstract = "We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on-offcurrent ratio of 105, subthreshold swing of 0.8 V/decade, and mobility of 5 cm2/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 105 at a gate bias of -5 V under 290 nm illumination.",

author = "Li, {Jyun Yi} and Chang, {Sheng Po} and Hsu, {Ming Hung} and Chang, {Shoou Jinn}",

note = "Funding Information: This work was supported by the Ministry of Science and Technology under contract number MOST 103-2221-E-006-098 and MOST 105-2221-E-006-118. This work was also supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan, and by the Advanced Z. Publisher Copyright: {\textcopyright} 2017 by the authors.",

year = "2017",

doi = "10.3390/ma10020126",

language = "English",

volume = "10",

journal = "Materials",

issn = "1996-1944",

publisher = "MDPI AG",

number = "2",

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TY - JOUR

T1 - High responsivity MgZnO ultraviolet thin-film phototransistor developed using radio frequency sputtering

AU - Li, Jyun Yi

AU - Chang, Sheng Po

AU - Hsu, Ming Hung

AU - Chang, Shoou Jinn

N1 - Funding Information: This work was supported by the Ministry of Science and Technology under contract number MOST 103-2221-E-006-098 and MOST 105-2221-E-006-118. This work was also supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan, and by the Advanced Z. Publisher Copyright: © 2017 by the authors.

PY - 2017

Y1 - 2017

N2 - We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on-offcurrent ratio of 105, subthreshold swing of 0.8 V/decade, and mobility of 5 cm2/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 105 at a gate bias of -5 V under 290 nm illumination.

AB - We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on-offcurrent ratio of 105, subthreshold swing of 0.8 V/decade, and mobility of 5 cm2/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 105 at a gate bias of -5 V under 290 nm illumination.

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DO - 10.3390/ma10020126

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VL - 10

JO - Materials

JF - Materials

IS - 2

M1 - 126

ER -

High responsivity MgZnO ultraviolet thin-film phototransistor developed using radio frequency sputtering

Abstract

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