High responsivity of GaN p-i-n photodiode by using low-temperature interlayer

J. C. Lin; Y. K. Su; S. J. Chang; W. H. Lan; K. C. Huang; W. R. Chen; C. Y. Huang; W. C. Lai; W. J. Lin; Y. C. Cheng

doi:10.1063/1.2800813

High responsivity of GaN p-i-n photodiode by using low-temperature interlayer

J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, W. R. Chen, C. Y. Huang, W. C. Lai, W. J. Lin, Y. C. Cheng

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36 Citations (Scopus)

Abstract

Gallium nitride p-i-n ultraviolet photodiodes with low-temperature (LT)-GaN interlayer have been fabricated. It was found that the dark current of photodiode with LT-GaN interlayer is as small as 143 pA at 5 V reverse bias. It was also found that the responsivity of the photodiode with LT-GaN interlayer can be enhanced at a small electric field (∼0.4 MVcm) due to the carrier multiplication effect. The UV photocurrent gain of 13 and large ionization coefficient (α=3.1× 105 cm-1) were also observed in the detector with LT-GaN interlayer. Furthermore, we can achieve a large peak responsivity of 2.27 AW from the photodiode with LT-GaN interlayer.

Original language	English
Article number	173502
Journal	Applied Physics Letters
Volume	91
Issue number	17
DOIs	https://doi.org/10.1063/1.2800813
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2800813

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@article{2a21faad37404377a2f8ca1d2262c125,

title = "High responsivity of GaN p-i-n photodiode by using low-temperature interlayer",

abstract = "Gallium nitride p-i-n ultraviolet photodiodes with low-temperature (LT)-GaN interlayer have been fabricated. It was found that the dark current of photodiode with LT-GaN interlayer is as small as 143 pA at 5 V reverse bias. It was also found that the responsivity of the photodiode with LT-GaN interlayer can be enhanced at a small electric field (∼0.4 MVcm) due to the carrier multiplication effect. The UV photocurrent gain of 13 and large ionization coefficient (α=3.1× 105 cm-1) were also observed in the detector with LT-GaN interlayer. Furthermore, we can achieve a large peak responsivity of 2.27 AW from the photodiode with LT-GaN interlayer.",

author = "Lin, {J. C.} and Su, {Y. K.} and Chang, {S. J.} and Lan, {W. H.} and Huang, {K. C.} and Chen, {W. R.} and Huang, {C. Y.} and Lai, {W. C.} and Lin, {W. J.} and Cheng, {Y. C.}",

note = "Funding Information: The authors would like to acknowledge the support from the Advanced Optoelectronic Technology Center, National Cheng Kung University, the Chung Shan Institute of Science and Technology, and the National Science Council for their research grant (No. NSC96-2221-E-390-013).",

year = "2007",

doi = "10.1063/1.2800813",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - High responsivity of GaN p-i-n photodiode by using low-temperature interlayer

AU - Lin, J. C.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Lan, W. H.

AU - Huang, K. C.

AU - Chen, W. R.

AU - Huang, C. Y.

AU - Lai, W. C.

AU - Lin, W. J.

AU - Cheng, Y. C.

N1 - Funding Information: The authors would like to acknowledge the support from the Advanced Optoelectronic Technology Center, National Cheng Kung University, the Chung Shan Institute of Science and Technology, and the National Science Council for their research grant (No. NSC96-2221-E-390-013).

PY - 2007

Y1 - 2007

N2 - Gallium nitride p-i-n ultraviolet photodiodes with low-temperature (LT)-GaN interlayer have been fabricated. It was found that the dark current of photodiode with LT-GaN interlayer is as small as 143 pA at 5 V reverse bias. It was also found that the responsivity of the photodiode with LT-GaN interlayer can be enhanced at a small electric field (∼0.4 MVcm) due to the carrier multiplication effect. The UV photocurrent gain of 13 and large ionization coefficient (α=3.1× 105 cm-1) were also observed in the detector with LT-GaN interlayer. Furthermore, we can achieve a large peak responsivity of 2.27 AW from the photodiode with LT-GaN interlayer.

AB - Gallium nitride p-i-n ultraviolet photodiodes with low-temperature (LT)-GaN interlayer have been fabricated. It was found that the dark current of photodiode with LT-GaN interlayer is as small as 143 pA at 5 V reverse bias. It was also found that the responsivity of the photodiode with LT-GaN interlayer can be enhanced at a small electric field (∼0.4 MVcm) due to the carrier multiplication effect. The UV photocurrent gain of 13 and large ionization coefficient (α=3.1× 105 cm-1) were also observed in the detector with LT-GaN interlayer. Furthermore, we can achieve a large peak responsivity of 2.27 AW from the photodiode with LT-GaN interlayer.

UR - http://www.scopus.com/inward/record.url?scp=35548994514&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35548994514&partnerID=8YFLogxK

U2 - 10.1063/1.2800813

DO - 10.1063/1.2800813

M3 - Article

AN - SCOPUS:35548994514

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 173502

ER -

High responsivity of GaN p-i-n photodiode by using low-temperature interlayer

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