High-selectivity damascene chemical mechanical polishing

Shao Yu Chiu, Ying Lang Wang, Chuan Pu Liu, Shih Chieh Chang, Gwo Jen Hwang, Ming Shiann Feng, Chia Fu Chen

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


In this study, multi-step chemical mechanical polishing (CMP) with different copper removal rates and polishing pads is used to eliminate topography efficiently and to reduce micro-scratches on copper films. In colloidal-silica-based slurry, the polishing behaviors of copper, tantalum and silicon dioxide are found to relate to that kind of alkaline additives. The size of cations from alkaline additives influences the zeta potential of slurries, so as to vary the material removal rate. The addition of small-sized K+ from KOH provides high removal selectivity of tantalum/copper and oxide/copper, so as to benefit the reduction of copper dishing.

Original languageEnglish
Pages (from-to)60-63
Number of pages4
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2006 Mar 1
EventProceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
Duration: 2004 Nov 122004 Nov 14

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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