High-selectivity damascene chemical mechanical polishing

Shao Yu Chiu; Ying Lang Wang; Chuan Pu Liu; Shih Chieh Chang; Gwo Jen Hwang; Ming Shiann Feng; Chia Fu Chen

doi:10.1016/j.tsf.2005.07.063

High-selectivity damascene chemical mechanical polishing

Shao Yu Chiu, Ying Lang Wang, Chuan Pu Liu, Shih Chieh Chang, Gwo Jen Hwang, Ming Shiann Feng, Chia Fu Chen

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

In this study, multi-step chemical mechanical polishing (CMP) with different copper removal rates and polishing pads is used to eliminate topography efficiently and to reduce micro-scratches on copper films. In colloidal-silica-based slurry, the polishing behaviors of copper, tantalum and silicon dioxide are found to relate to that kind of alkaline additives. The size of cations from alkaline additives influences the zeta potential of slurries, so as to vary the material removal rate. The addition of small-sized K⁺ from KOH provides high removal selectivity of tantalum/copper and oxide/copper, so as to benefit the reduction of copper dishing.

Original language	English
Pages (from-to)	60-63
Number of pages	4
Journal	Thin Solid Films
Volume	498
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.07.063
Publication status	Published - 2006 Mar 1
Event	Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD - Duration: 2004 Nov 12 → 2004 Nov 14

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2005.07.063

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@article{f1d8c13a7aec46dba5add7fd7b4f064b,

title = "High-selectivity damascene chemical mechanical polishing",

abstract = "In this study, multi-step chemical mechanical polishing (CMP) with different copper removal rates and polishing pads is used to eliminate topography efficiently and to reduce micro-scratches on copper films. In colloidal-silica-based slurry, the polishing behaviors of copper, tantalum and silicon dioxide are found to relate to that kind of alkaline additives. The size of cations from alkaline additives influences the zeta potential of slurries, so as to vary the material removal rate. The addition of small-sized K+ from KOH provides high removal selectivity of tantalum/copper and oxide/copper, so as to benefit the reduction of copper dishing.",

author = "Chiu, {Shao Yu} and Wang, {Ying Lang} and Liu, {Chuan Pu} and Chang, {Shih Chieh} and Hwang, {Gwo Jen} and Feng, {Ming Shiann} and Chen, {Chia Fu}",

note = "Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan, for partially supporting this research under Contract no. NSC92-2216-E006-046. Technical assistance from the National Nano Device Laboratories of NSC is also appreciated.; Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD ; Conference date: 12-11-2004 Through 14-11-2004",

year = "2006",

month = mar,

day = "1",

doi = "10.1016/j.tsf.2005.07.063",

language = "English",

volume = "498",

pages = "60--63",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - High-selectivity damascene chemical mechanical polishing

AU - Chiu, Shao Yu

AU - Wang, Ying Lang

AU - Liu, Chuan Pu

AU - Chang, Shih Chieh

AU - Hwang, Gwo Jen

AU - Feng, Ming Shiann

AU - Chen, Chia Fu

N1 - Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan, for partially supporting this research under Contract no. NSC92-2216-E006-046. Technical assistance from the National Nano Device Laboratories of NSC is also appreciated.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - In this study, multi-step chemical mechanical polishing (CMP) with different copper removal rates and polishing pads is used to eliminate topography efficiently and to reduce micro-scratches on copper films. In colloidal-silica-based slurry, the polishing behaviors of copper, tantalum and silicon dioxide are found to relate to that kind of alkaline additives. The size of cations from alkaline additives influences the zeta potential of slurries, so as to vary the material removal rate. The addition of small-sized K+ from KOH provides high removal selectivity of tantalum/copper and oxide/copper, so as to benefit the reduction of copper dishing.

AB - In this study, multi-step chemical mechanical polishing (CMP) with different copper removal rates and polishing pads is used to eliminate topography efficiently and to reduce micro-scratches on copper films. In colloidal-silica-based slurry, the polishing behaviors of copper, tantalum and silicon dioxide are found to relate to that kind of alkaline additives. The size of cations from alkaline additives influences the zeta potential of slurries, so as to vary the material removal rate. The addition of small-sized K+ from KOH provides high removal selectivity of tantalum/copper and oxide/copper, so as to benefit the reduction of copper dishing.

UR - http://www.scopus.com/inward/record.url?scp=30944445998&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30944445998&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.07.063

DO - 10.1016/j.tsf.2005.07.063

M3 - Conference article

AN - SCOPUS:30944445998

SN - 0040-6090

VL - 498

SP - 60

EP - 63

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD

Y2 - 12 November 2004 through 14 November 2004

ER -

High-selectivity damascene chemical mechanical polishing

Abstract

All Science Journal Classification (ASJC) codes

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