High-sensitivity nitride-based ultraviolet photosensors with a low-temperature AlGaN interlayer

K. H. Lee; P. C. Chang; S. J. Chang; Y. K. Su; Y. C. Wang; C. H. Liu

doi:10.1007/s11664-009-0960-7

High-sensitivity nitride-based ultraviolet photosensors with a low-temperature AlGaN interlayer

K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su, Y. C. Wang, C. H. Liu

Research output: Contribution to journal › Article › peer-review

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Abstract

Nitride-based ultraviolet (UV) photosensors with a low-temperature (LT) AlGaN interlayer were fabricated and characterized. Material analysis results showed that dark pits corresponding to threading dislocation (TD) terminations were almost invisible after inserting the LT AlGaN interlayer. It was also found that we could significantly suppress the dark leakage current by using the LT AlGaN interlayer owing to TD annihilation and demultiplication processes. For photosensors with the LT AlGaN interlayer, the responsivity at 360 nm and UV-to-visible rejection ratio were found to be 0.12 A/W and 2.45 × 10 ³, respectively, under 5 V applied bias.

Original language	English
Pages (from-to)	29-33
Number of pages	5
Journal	Journal of Electronic Materials
Volume	39
Issue number	1
DOIs	https://doi.org/10.1007/s11664-009-0960-7
Publication status	Published - 2010 Jan

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-009-0960-7

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title = "High-sensitivity nitride-based ultraviolet photosensors with a low-temperature AlGaN interlayer",

abstract = "Nitride-based ultraviolet (UV) photosensors with a low-temperature (LT) AlGaN interlayer were fabricated and characterized. Material analysis results showed that dark pits corresponding to threading dislocation (TD) terminations were almost invisible after inserting the LT AlGaN interlayer. It was also found that we could significantly suppress the dark leakage current by using the LT AlGaN interlayer owing to TD annihilation and demultiplication processes. For photosensors with the LT AlGaN interlayer, the responsivity at 360 nm and UV-to-visible rejection ratio were found to be 0.12 A/W and 2.45 × 10 3, respectively, under 5 V applied bias.",

author = "Lee, {K. H.} and Chang, {P. C.} and Chang, {S. J.} and Su, {Y. K.} and Wang, {Y. C.} and Liu, {C. H.}",

note = "Funding Information: This work was supported in part by the National Science Council under Contract NSC 97-2221-E-168-051-MY3.",

year = "2010",

month = jan,

doi = "10.1007/s11664-009-0960-7",

language = "English",

volume = "39",

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T1 - High-sensitivity nitride-based ultraviolet photosensors with a low-temperature AlGaN interlayer

AU - Lee, K. H.

AU - Chang, P. C.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Wang, Y. C.

AU - Liu, C. H.

N1 - Funding Information: This work was supported in part by the National Science Council under Contract NSC 97-2221-E-168-051-MY3.

PY - 2010/1

Y1 - 2010/1

N2 - Nitride-based ultraviolet (UV) photosensors with a low-temperature (LT) AlGaN interlayer were fabricated and characterized. Material analysis results showed that dark pits corresponding to threading dislocation (TD) terminations were almost invisible after inserting the LT AlGaN interlayer. It was also found that we could significantly suppress the dark leakage current by using the LT AlGaN interlayer owing to TD annihilation and demultiplication processes. For photosensors with the LT AlGaN interlayer, the responsivity at 360 nm and UV-to-visible rejection ratio were found to be 0.12 A/W and 2.45 × 10 3, respectively, under 5 V applied bias.

AB - Nitride-based ultraviolet (UV) photosensors with a low-temperature (LT) AlGaN interlayer were fabricated and characterized. Material analysis results showed that dark pits corresponding to threading dislocation (TD) terminations were almost invisible after inserting the LT AlGaN interlayer. It was also found that we could significantly suppress the dark leakage current by using the LT AlGaN interlayer owing to TD annihilation and demultiplication processes. For photosensors with the LT AlGaN interlayer, the responsivity at 360 nm and UV-to-visible rejection ratio were found to be 0.12 A/W and 2.45 × 10 3, respectively, under 5 V applied bias.

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

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High-sensitivity nitride-based ultraviolet photosensors with a low-temperature AlGaN interlayer

Abstract

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